Method for direct forming stressor, semiconductor device having stressor, and method for forming the same
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsChe-Wei Yang, Hao-Hsiung Lin, Samuel C. Pan
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Abstract
A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor is a grading strained stressor including multiple graded portions formed at graded depths. The first stressor is configured to create one of a graded compressive stress or a graded tensile stress.
Claims20
A semiconductor device, comprising:
- a semiconductor fin protruding from a substrate;
- a gate structure disposed on the semiconductor fin, the gate structure comprising a gate electrode and a gate insulating layer disposed between the semiconductor fin and the gate electrode;
- and
- a first stressor in a region of the substrate under the gate structure, wherein the first stressor has two or more portions at two or more different depths, wherein two of the two or more portions are connected.
A semiconductor device, comprising:
- a semiconductor fin protruding from a substrate;
- and
- a first stressor in a region of the substrate under the semiconductor fin, wherein the first stressor has two or more portions at two or more different depths, wherein two of the two or more portions are connected.
A semiconductor device, comprising:
- a semiconductor fin protruding from a substrate;
- a gate structure disposed on the semiconductor fin, the gate structure comprising a gate electrode and a gate insulating layer disposed between the semiconductor fin and the gate electrode;
- and
- a stressor formed in regions of the substrate under the gate structure that are laterally adjacent to opposite sides of the semiconductor fin, wherein the stressor has two or more portions at two or more different depths, wherein two of the two or more portions are connected.
Dependencies are inferred from the claim text.