Forming a reliable wrap-around contact without source/drain sacrificial regions
AssigneeInternational Business Machines Corporation
InventorsJulien Frougier, Kangguo Cheng, Ruilong Xie
Life of this patent
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Abstract
Embodiments of the present invention are directed to forming a reliable wrap-around contact (WAC) without using a source/drain sacrificial region. In a non-limiting embodiment of the invention, an isolation structure is formed over a substrate. A source or drain (S/D) region is formed over the substrate and between sidewalls of the isolation structure. A liner is formed over the S/D region and a sacrificial region is formed over the liner. The sacrificial region can be recessed below a surface of the isolation structure and an interlayer dielectric can be formed over the recessed surface of the sacrificial region. The sacrificial region can be replaced with a wrap-around contact.
Claims16
A method for forming a semiconductor device, the method comprising:
- forming an isolation structure over a substrate;
- forming a source or drain (S/D) region over the substrate and between sidewalls of the isolation structure;
- forming a liner over the S/D region;
- forming a sacrificial region over the liner;
- recessing the sacrificial region below a surface of the isolation structure;
- forming an interlayer dielectric over a recessed surface of the sacrificial region;
- and
- replacing the sacrificial region with a wrap-around contact.
A method for forming a semiconductor device, the method comprising:
- forming a liner over a source or drain (S/D) region;
- forming a sacrificial region over the liner;
- removing the sacrificial region to form a cavity exposing a surface of the liner;
- and
- forming a wrap-around contact in the cavity, the wrap-around contact on sidewalls of the S/D region;
- wherein a portion of the liner in contact with the wrap-around contact undergoes a silicidation process.
A method for forming a semiconductor device, the method comprising:
- forming a liner over a source or drain (S/D) region;
- forming a sacrificial region over the liner;
- removing the sacrificial region to form a cavity exposing a surface of the liner;
- and
- forming a wrap-around contact in the cavity, the wrap-around contact on sidewalls of the S/D region;
- wherein the liner comprises silicon oxide and the sacrificial region comprises amorphous silicon or silicon germanium.
Dependencies are inferred from the claim text.