Interconnect with high quality ultra-low-k dielectric
AssigneeInternational Business Machines Corporation
InventorKangguo Cheng
Life of this patent
Estimating the term…
Abstract
Semiconductor devices and methods for forming the semiconductor devices include first line trenches formed in a dielectric layer on a substrate. Sacrificial spacers are formed on sidewalls of the dielectric layer in the first line trenches. Second line trenches are formed in the dielectric layer, the first line trenches and the second line trenches including alternating rows of trenches separated by the sacrificial spacers. The first line trenches and the second line trenches are filled with conductive material to form conductive lines. The sacrificial spacers are replaced with an isolation material.
Claims16
A method for forming a semiconductor device, the method comprising:
- forming first line trenches in a dielectric layer on a substrate;
- forming sacrificial spacers on sidewalls of the dielectric layer in the first line trenches;
- forming second line trenches in the dielectric layer, the first line trenches and the second line trenches including alternating rows of trenches separated by the sacrificial spacers;
- filling the first line trenches and the second line trenches with conductive material to form conductive lines;
- and
- replacing the sacrificial spacers with an isolation material.
A method for forming a semiconductor device, the method comprising:
- patterning a first etch mask over a dielectric layer on a substrate corresponding to a first pattern;
- etching first line trenches into the dielectric layer through the first etch mask;
- removing the first etch mask;
- forming sacrificial spacers on sidewalls of the dielectric layer in the first line trenches;
- patterning a second etch mask over the dielectric layer and the first line trenches corresponding to second pattern, the first pattern and the second pattern corresponding to alternating rows of first conductive lines and second conductive lines;
- etching second line trenches into the dielectric layer through the second etch mask;
- filling the first line trenches and the second line trenches with a conductive material to form the first conductive lines and the second conductive lines;
- and
- replacing the sacrificial spacers with an isolation material.
Dependencies are inferred from the claim text.