Gate contact over active region with self-aligned source/drain contact

Abstract

A method for forming a semiconductor structure is provided. The method includes depositing a dielectric material in a first opening above a first source/drain region in a first region of the semiconductor structure and in a second and a third opening above a respective second and a third source/drain region in a second region of the silicon structure. There is a gate region between the second and third source/drain regions. The method etches away the dielectric material deposited in the first opening and deposits an organic material in the first opening. The method further etches a region above the gate region between the second and third source/drain regions to expose the gate region and form a fourth opening and removes the organic material from the first opening. The method deposits a metal in the first opening and the fourth opening.

Dependencies are inferred from the claim text.