Bulk substrates with a self-aligned buried polycrystalline layer
AssigneeGlobalfoundries Inc.
InventorsSteven M. Shank, Anthony K. Stamper, Ian McCallum-Cook, Siva P. Adusumilli
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Abstract
Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A first non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. A second non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. The first non-single-crystal layer is arranged between the second non-single-crystal layer and the active device region.
Claims13
A structure comprising:
- a semiconductor substrate including a single-crystal semiconductor layer, a plurality of trench isolation regions surrounding an active device region of the single-crystal semiconductor layer, a first non-single-crystal layer comprised of polycrystalline semiconductor material arranged beneath the trench isolation regions and the active device region, and a second non-single-crystal layer comprised of polycrystalline semiconductor material arranged beneath the trench isolation regions and the active device region, the first non-single-crystal layer arranged between the second non-single-crystal layer and the active device region, and the single-crystal semiconductor layer including a first section that separates the first non-single-crystal layer from the second non-single-crystal layer.
Dependencies are inferred from the claim text.