Systems and methods for performing epitaxial smoothing processes on semiconductor structures
AssigneeGlobalWafers Co., Ltd.
InventorCharles Robert Lottes
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Abstract
Systems and methods for processing semiconductor structures are provided. The methods generally include determining a desired removal map profile for a device layer of a semiconductor structure, determining a set of process parameters for use in an epitaxial smoothing process based on the desired removal map profile, and selectively removing material from the device layer by performing an epitaxial smoothing process on an outer surface of the device layer.
Claims20
A method for processing a semiconductor structure comprising a semiconductor device layer defining an outer surface of the semiconductor structure, the method comprising:
- measuring an initial thickness profile of the device layer;
- determining a desired removal map profile for the device layer of the semiconductor structure by determining a removal map profile that is complementary to the initial thickness profile of the device layer;
- determining a set of process parameters for use in a gaseous etchant epitaxial smoothing process based on the desired removal map profile, wherein determining a set of process parameters includes selecting, based on the desired removal map profile, the set of process parameters from a plurality of pre-determined process parameter sets, each pre-determined process parameter set associated with a pre-determined removal map profile;
- and
- selectively removing material from the device layer according to the removal map profile by performing an epitaxial smoothing process on the outer surface using the determined set of process parameters.
A system for processing a semiconductor structure comprising a semiconductor device layer defining an outer surface of the semiconductor structure, the system comprising:
- a wafer measuring device configured to measure a thickness profile of the device layer;
- a wafer processing device;
- a computing device communicatively connected to the thickness measuring device, the computing device configured to:
- determine a desired removal map profile for the device layer of the semiconductor structure based on the thickness profile of the device layer;
- and
- determine a set of process parameters for use in a gaseous etchant epitaxial smoothing process based on the desired removal map profile;
- and
- a removal map profile library communicatively connected to the computing device, the removal map profile library including a plurality of pre-determined removal map profiles and a plurality of pre-determined process parameter sets, each pre-determined removal map profile associated with one of the pre-determined process parameter sets;
- wherein the computing device determines the set of process parameters by selecting, based on the desired removal map profile, the set of process parameters from the plurality of pre-determined process parameter sets;
- and
- wherein the wafer processing device is configured to selectively remove material from the device layer according to the removal map profile by performing a gaseous etchant epitaxial smoothing process on the outer surface using the determined set of process parameters.
Dependencies are inferred from the claim text.