Thermal processing device, substrate processing apparatus, thermal processing method and substrate processing method
AssigneeSCREEN Holdings Co., Ltd.
InventorsMasahiko Harumoto, Masaya Asai, Yuji Tanaka, Koji Kaneyama
Life of this patent
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Abstract
A heating plate is stored in a chamber. With a solvent containing gas present in the chamber, a substrate on which a DSA film is formed is held at a position further upward than the heating plate. Thus, neutralization of an atmosphere is performed at a temperature at which microphase separation does not occur. Thereafter, with the solvent containing gas present in the chamber, the substrate is held on an upper surface of the heating plate. Thus, thermal processing is performed on the DSA film on the substrate.
Claims8
A thermal processing device that performs thermal processing on a substrate on which a process film made of a directed self assembly material is formed, comprising:
- a heater that performs the thermal processing on the substrate at a preset thermal processing temperature;
- a chamber that stores the heater, the chamber having an opening for receiving and taking out the substrate and a lid provided to be capable of opening and closing the opening;
- a gas supplier that supplies a solvent containing gas including an organic solvent into the chamber;
- a substrate mover that is configured to move the substrate between a first position at which the thermal processing is not performed on the substrate by the heater and a second position at which the thermal processing is performed on the substrate by the heater in the chamber;
- and
- a moving controller that is configured to control the substrate mover such that the substrate is held at the first position with the solvent containing gas supplied by the gas supplier present in the chamber, and then controls the substrate mover such that the substrate is held at the second position with the solvent containing gas present in the chamber,
- wherein the first position is set to a position at which microphase separation does not occur in the process film in a case where a temperature of the heater is the thermal processing temperature with the solvent containing gas present, and
- the second position is set to a position at which the microphase separation occurs in the process film in a case where the temperature of the heater is the thermal processing temperature with the solvent containing gas present.
Dependencies are inferred from the claim text.