US 10,832,922 B2 · Semiconductor device

Abstract

A semiconductor device according to the present invention includes a semiconductor chip having a semiconductor layer that has a first surface on a die-bonding side, a second surface on the opposite side of the first surface, and an end surface extending in a direction crossing the first surface and the second surface, a first electrode that is formed on the first surface and has a peripheral edge at a position separated inward from the end surface, and a second electrode formed on the second surface, a conductive substrate onto which the semiconductor chip is die-bonded, a conductive spacer that has a planar area smaller than that of the first electrode and supports the semiconductor chip on the conductive substrate, and a resin package that seals at least the semiconductor chip and the conductive spacer.

Claims35

Dependent claims

A semiconductor device with a MISFET type structure comprising:

a semiconductor layer having a surface and an end surface extending in a direction crossing the surface;
a second conductivity type body region formed in a surface portion of the semiconductor layer;
a first conductivity type source region formed in a surface portion of the body region;
a first conductivity type drift region that is formed so as to be exposed to a back surface of the semiconductor layer and separated from the source region by the body region;
a gate electrode that faces the body region across an insulation film;
a drain electrode that is Schottky joined to the drift region on the back surface of the semiconductor layer, and has a peripheral edge at a position separated inward from the end surface of the semiconductor layer;
and
a back surface termination structure that is formed in a back surface portion of the semiconductor laser, and disposed so as to overlap the peripheral edge portion of the drain electrode.

5 more elements

A semiconductor device comprising:

a semiconductor layer which has a first surface on a die-bonding side, a second surface on a side opposite to the first surface, and an end surface extending in a direction crossing the first surface and the second surface, and in which an active region and an outer peripheral region surrounding the active region are formed;
a first electrode that is formed on the first surface of the semiconductor layer and has a peripheral edge at a position separated inward from the end surface of the semiconductor layer;
a first termination structure that is formed in a surface portion on the first surface side of the semiconductor layer, and disposed so as to overlap the peripheral edge portion of the first electrode;
a second electrode that is formed on the second surface of the semiconductor layer, and has a peripheral edge at a position separated inward from the end surface of the semiconductor layer;
and
a protective insulation film that is formed so as to come into contact with at least the peripheral edge portion of the first electrode, and covers a semiconductor surface of the semiconductor layer from the peripheral edge of the first electrode to the end surface of the semiconductor layer, wherein
when a reverse voltage is applied between the first electrode and the second electrode, a current that flows in a reverse direction between the first electrode and the second electrode is reduced.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims35