Insulator semiconductor device-structure
AssigneesSemiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
InventorXianchao Wang
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a first semiconductor layer on the semiconductor substrate and having an exposed portion of a lower surface, a capping layer on the first semiconductor layer, a second semiconductor layer below the capping layer and having a side surface substantially in full contact with the capping layer, a cavity defined by the first semiconductor layer, the second semiconductor layer, and the capping layer, and a through-hole passing through the capping layer and the second semiconductor layer and extending to the cavity.
Claims13
A semiconductor device, comprising:
- a semiconductor substrate;
- a first semiconductor layer on the semiconductor substrate and having an exposed portion of a lower surface;
- a capping layer on the first semiconductor layer and the capping layer being in contact with the first semiconductor layer;
- a second semiconductor layer below the capping layer and having a rounded off surface substantially in full contact with the capping layer;
- a cavity defined by the first semiconductor layer, the second semiconductor layer, and the capping layer;
- and
- a through-hole passing through the capping layer and the second semiconductor layer and extending to the cavity.
Dependencies are inferred from the claim text.