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US 10,832,913 B2Granted
Method and apparatus for forming semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsan-Chun Wang, Chiao-Ting Tai, Che-Fu Chiu, Chun-Feng Nieh
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Abstract
A method for forming a semiconductor structure comprises heating a solid material to form a gaseous substance; ionizing the gaseous substance to produce a first type of ions; and implanting the first type of ions into a semiconductor substrate. The method can achieve better abruptness, better shallow junction depth, and better sheet resistance.
Claims20
A method for forming a semiconductor structure, comprising:
- providing a silicon germanium substrate;
- forming a junction region in the silicon germanium substrate;
- heating a solid material to form a gaseous substance, comprising heating the solid material to a temperature over 150˜170° C. at a pressure about 1E-5 torr;
- ionizing the gaseous substance to produce a first type of ions;
- performing a pre-amorphization implantation (PAI) comprising implanting the first type of ions into the junction region;
- implanting boron ions into the junction region subsequent to implanting the first type of ions;
- and
- annealing the junction region implanted by the first type of ions and the boron ions.
5 more elements
A method for forming a semiconductor structure, comprising:
- heating a solid material to a temperature greater than 150° C. at a pressure about 1E-5 torr to form a first gaseous substance, wherein the solid material comprises gallium;
- transferring the first gaseous substance into an ionizing chamber;
- ionizing the first gaseous substance to produce a first type of ions;
- implanting the first type of ions into a semiconductor substrate;
- introducing a second gaseous substance into the ionizing chamber subsequent to implanting the first type of ions, wherein the second gaseous substance comprises boron;
- ionizing the second gaseous substance to produce a second type of ions;
- and
- implanting the second type of ions into the semiconductor substrate.
5 more elements
A method for forming a semiconductor structure, comprising:
- providing a gallium-containing gas;
- heating the gallium-containing gas to a temperature over 150˜170° C. at a pressure about 1E-5 torr;
- ionizing the gallium-containing gas to produce a plurality of ions;
- and
- implanting the plurality of ions into a semiconductor substrate.
2 more elements
Dependencies are inferred from the claim text.