Semiconductor device

A semiconductor device having an n-type GaN layer with a donor concentration of 1×1015/cm3 to 2×1016/cm3, a p-type GaN region formed by ion implantation and annealing in a part of the n-type layer, and a Schottky electrode formed on the n-type layer and the p-type region and coming into Schottky contact with the n-type layer,

• wherein a region with the p-type region in plan view is defined as region B;
• an electron trap energy level of 0.10 eV to 0.20 eV below the GaN conduction band edge is defined as TE1;
• an electron trap energy level of 0.20 eV to 0.30 eV below the GaN conduction band edge is defined as TE2;
• an electron trap energy level of 0.45 eV to 0.60 eV below the GaN conduction band edge is defined as TE4;
• an electron trap energy level of 1.10 eV to 1.40 eV below the GaN conduction band edge is defined as TE9;
• an average density of each electron trap level in the region B is an average density of each electron trap level of the n-type layer in a region having a depth of 0.8 μm to 1.6 μm on the n-type layer side from a boundary between the n-type layer and the p-type region;
• and
• the average density of each electron trap level in the region B is set so that the ratio of the average density of the electron trap level TE2 to the average density of the electron trap level TE4 is larger than the ratio of the average density of the electron trap level TE9 to the average density of the electron trap level TE4, and the ratio of the average density of the electron trap level TE9 to the average density of the electron trap level TE4 is larger than the ratio of the average density of the electron trap level TE1 to the average density of the electron trap level TE4.

A semiconductor device having an n-type GaN layer with a donor concentration of 1×1015/cm3 to 2×1016/cm3, a p-type GaN layer formed on the n-type layer, and a p-type GaN region formed by ion implantation and annealing in a part of the n-type layer,

• wherein a region without the p-type region in plan view is defined as region A;
• an electron trap energy level of 0.45 eV to 0.60 eV below the GaN conduction band edge is defined as TE4;
• an average density of each electron trap level in the region A is an average density of each electron trap level of the n-type layer in a region having a depth of 0.8 μm to 1.6 μm on the n-type layer side from a boundary between the n-type layer and the p-type layer;
• and
• the average density of each electron trap level in the region A is set to not larger than 1/500 of the donor concentration of the n-type layer.

A semiconductor device having an n-type GaN layer with a donor concentration of 1×1015/cm3 to 2×1016/cm3, a p-type GaN layer formed on the n-type layer, and a p-type GaN region formed by ion implantation and annealing in a part of the n-type layer,

• wherein a region with the p-type region in plan view is defined as region B;
• an electron trap energy level of 0.10 eV to 0.20 eV below the GaN conduction band edge is defined as TE1;
• an electron trap energy level of 0.20 eV to 0.30 eV below the GaN conduction band edge is defined as TE2;
• an electron trap energy level of 0.45 eV to 0.60 eV below the GaN conduction band edge is defined as TE4;
• an electron trap energy level of 1.10 eV to 1.40 eV below the GaN conduction band edge is defined as TE9;
• an average density of each electron trap level in the region B is an average density of each electron trap level of the n-type layer in a region having a depth of 0.8 μm to 1.6 μm on the n-type layer side from a boundary between the n-type layer and the p-type region;
• and
• the average density of each electron trap level in the region B is set so that the ratio of the average density of the electron trap level TE2 to the average density of the electron trap level TE4 is larger than the ratio of the average density of the electron trap level TE9 to the average density of the electron trap level TE4, and the ratio of the average density of the electron trap level TE9 to the average density of the electron trap level TE4 is larger than the ratio of the average density of the electron trap level TE1 to the average density of the electron trap level TE4.