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US 10,832,908 B2Granted
Self-aligned multi-patterning process flow with ALD gapfill spacer mask
AssigneeLam Research Corporation
InventorAdrien LaVoie
Life of this patent
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Abstract
Methods and apparatuses for forming symmetrical spacers for self-aligned multiple patterning processes are described herein. Methods include depositing gapfill material by atomic layer deposition over a patterned substrate including core material and a target layer, planarizing substrate, and etching the core material to form symmetrical spacers. Gapfill material may be deposited for a duration insufficient to completely fill features such that features are underfilled.
Claims14
A method comprising:
- providing a substrate having a target layer, a patterned core material over the target layer, and gaps between the patterned core material;
- depositing gapfill material comprising a material selected from the group consisting of silicon oxide, silicon nitride, and silicon carbide conformally on the patterned core material by atomic layer deposition for a duration sufficient to fill the gaps with the gapfill material on the substrate;
- after depositing the gapfill material, planarizing the substrate by chemical mechanical planarization to form a planar surface comprising the gapfill material and the patterned core material, wherein planarizing the substrate causes the gapfill material to be symmetrically shaped, thereby forming symmetrically shaped spacers comprising the gapfill material;
- performing an etching process to selectively remove the patterned core material relative to the gapfill material;
- and
- etching the target layer using the symmetrically shaped spacers as a mask,
- wherein the symmetrically shaped spacers have a planar top profile with vertical surfaces of the symmetrically shaped spacers oriented at or about 90° from a top horizontal surface of the symmetrically shaped spacers after the planarizing, and
- wherein the patterned core material is selected from the group consisting of spin on carbon, diamond-like carbon, and gapfill ashable hard mask,
- wherein the mask used to etch the target layer consists essentially of the symmetrically shaped spacers.
6 more elements
A method comprising:
- providing a substrate having a target layer, a patterned core material over the target layer, and gaps between the patterned core material;
- depositing gapfill material selected from the group consisting of silicon oxide, silicon nitride, and silicon carbide conformally on sidewalls of the patterned core material by atomic layer deposition for a duration sufficient to completely fill the gaps with the gapfill material on the substrate;
- immediately after depositing the gapfill material, planarizing the substrate by chemical mechanical planarization to form a planar surface comprising the gapfill material and the patterned core material, wherein planarizing the substrate causes the gapfill material to be symmetrically shaped, thereby forming symmetrically shaped spacers comprising the gapfill material;
- after planarizing the substrate, performing an etching process to selectively remove the patterned core material relative to the gapfill material to leave the symmetrically shaped spacers;
- and
- etching the target layer using an etch mask consisting essentially of the symmetrically shaped spacers,
- wherein the symmetrically shaped spacers have a planar top profile with vertical surfaces of the symmetrically shaped spacers oriented at or about 90° from a top horizontal surface of the symmetrically shaped spacers after the planarizing, and
- wherein the patterned core material is selected from the group consisting of spin on carbon, diamond-like carbon, and gapfill ashable hard mask.
5 more elements
A method comprising:
- providing a substrate having a target layer;
- a patterned core material over the target layer;
- and gaps between the patterned core material;
- depositing gapfill material comprising a single material selected from the group consisting of silicon oxide, silicon nitride, and silicon carbide conformally over sidewalls of the patterned core material such that gapfill material is deposited in the gaps on the substrate for a duration sufficient to fill the gaps;
- after depositing the gapfill material, planarizing the substrate by chemical mechanical planarization to form a planar surface comprising the gapfill material and the patterned core material, wherein planarizing the substrate causes the gapfill material to be symmetrically shaped and have a horizontal planar top profile, thereby forming symmetrically shaped spacers comprising the gapfill material;
- and
- selectively etching the patterned core material relative to the gapfill material to form the symmetrically shaped spacers, and
- etching the target layer using a mask consisting essentially of the symmetrically shaped spacers, and
- wherein the patterned core material is selected from the group consisting of spin on carbon, diamond-like carbon, and gapfill ashable hard mask,
- wherein the gaps in the patterned core material prior to depositing the gapfill material have aspect ratios greater than about 20:1.
7 more elements
Dependencies are inferred from the claim text.