Method for direct patterned growth of atomic layer transition metal dichalcogenides
AssigneeHonda Motor Co., Ltd.
InventorsXufan Li, Avetik Harutyunyan
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Abstract
A method for direct growth of a patterned transition metal dichalcogenide monolayer, the method including the steps of providing a substrate covered by a mask, the mask having a pattern defined by one or more shaped voids; thermally depositing a salt on the substrate through the one or more shaped voids such that a deposited salt is provided on the substrate in the pattern of the mask; and thermally co-depositing a transition metal oxide and a chalcogen onto the deposited salt to form the patterned transition metal dichalcogenide monolayer having the pattern of the mask. Also provided is a patterned transition metal dichalcogenide monolayer prepared according to the method.
Claims21
A method for direct growth of a patterned transition metal dichalcogenide monolayer, the method comprising:
- providing a substrate covered by a mask, the mask having a pattern defined by one or more shaped voids;
- thermally depositing a salt on the substrate through the one or more shaped voids such that a deposited salt is provided on the substrate in the pattern of the mask;
- and
- thermally co-depositing a transition metal oxide and a chalcogen onto the deposited salt to form the patterned transition metal dichalcogenide monolayer having the pattern of the mask.
A transition metal dichalcogenide monolayer prepared by a method comprising:
- providing a substrate;
- depositing a salt on the substrate;
- and
- depositing a transition metal oxide and a chalcogen onto the deposited salt to form the transition metal dichalcogenide monolayer.
Dependencies are inferred from the claim text.