Process feed management for semiconductor substrate processing

A semiconductor reactor comprising a gas channel plate, wherein the gas channel plate comprises:

• a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps;
• a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate;
• an annular purge channel formed within a mounting surface configured to mount an upstream pulse valve manifold to a heat exchange surface side of the gas channel plate;
• a purge gas inlet port fluidly connected to the annular purge channel, wherein gas provided to the annular purge channel fluidly communicates with an ambient environment across a gasket disposed between the gas channel plate and a pulse valve manifold positioned upstream of the gas channel plate;
• and
• a diffusion surface disposed opposite the heat exchange surface and having a radial profile with respect to a centerline axis of the gas channel plate, the diffusion surface and an upper surface of a showerhead attached to the gas channel plate defining a showerhead volume there between.

A gas channel plate for a semiconductor process module, the gas channel plate comprising:

• a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps;
• and a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate;
• an annular purge channel formed within a mounting surface configured to mount an upstream pulse valve manifold to a heat exchange surface side of the gas channel plate;
• a purge gas inlet port fluidly connected to the annular purge channel, wherein gas provided to the annular purge channel fluidly communicates with an ambient environment across a gasket disposed between the gas channel plate and a pulse valve manifold positioned upstream of the gas channel plate:
• and
• a diffusion surface disposed opposite the heat exchange surface and having a radial profile with respect to a centerline axis of the gas channel plate, the diffusion surface and an upper surface of a showerhead attached to the gas channel plate defining a showerhead volume there between, where the radial profile includes a portion of the diffusion surface disposed at an angle of between 0 and 5 degrees with respect to a reference plane defining a widest portion of the showerhead volume, and where the upper surface of the showerhead is spaced from the portion of the diffusion surface so that the portion of the diffusion surface and a respective portion of the upper surface remain a constant distance apart as distance from a centerline of the gas channel plate increases.

A gas channel plate for a semiconductor process module, the gas channel plate comprising:

• a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps;
• a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate;
• an annular purge channel formed within a mounting surface configured to mount an upstream pulse valve manifold to a heat exchange surface side of the gas channel plate;
• a purge gas inlet port fluidly connected to the annular purge channel, wherein gas provided to the annular purge channel fluidly communicates with an ambient environment across a gasket disposed between the gas channel plate and a pulse valve manifold positioned upstream of the gas channel plate;
• and
• a diffusion surface disposed opposite the heat exchange surface and having a radial profile with respect to a centerline axis of the gas channel plate, the diffusion surface and an upper surface of a showerhead attached to the gas channel plate defining a showerhead volume there between.