Non-volatile memory with countermeasure for program disturb including purge during precharge

An apparatus, comprising:

• signal lines configured to communicate with a plurality of NAND strings;
• a control circuit connected to the signal lines, the control circuit is configured to:
• apply a program voltage to the signal lines in order to cause programming of the plurality of NAND strings;
• apply boosting signals to the signal lines in order to cause boosting of the channels of unselected NAND strings of the plurality of NAND strings,
• apply pre-charging signals to the signal lines in order to cause pre-charging of the channels of at least a subset of the unselected NAND strings prior to the boosting by applying a pre-charge voltage to unprogrammed sides of the subset of the unselected NAND strings, and
• apply a bypass voltage to the signal lines in order to cause the bypass voltage to be applied to an already programmed side of the subset of the unselected NAND strings while pre-charging, the bypass voltage is greater than the pre-charge voltage, the bypass voltage comprises a voltage of a magnitude sufficient to cause memory cells receiving the bypass voltage to turn on regardless of which data state the memory cells are programmed or erased to.

An apparatus, comprising:

• a plurality of signal lines configured to be in communication with a plurality of non-volatile memory cells that include a plurality of channels;
• and
• a control circuit connected to the signal lines, the control circuit is configured to
• apply a programming voltage to program selected memory cells of the plurality of non-volatile memory cells that are connected to a common word line;
• boost voltage of channels connected to unselected memory cells of the plurality of non-volatile memory cells that are connected to the common word line,
• pre-charge the channels connected to the unselected memory cells prior to boosting the voltage of the channels connected to the unselected memory cells, and
• causing application of a bypass voltage to a programmed side unselected word line that is adjacent to the selected word line while the channels connected to unselected memory cells are pre-charging, the bypass voltage is greater than the pre-charge voltage, the bypass voltage comprises a voltage of a magnitude sufficient to cause memory cells receiving the bypass voltage to turn on regardless of which data state the memory cells are programmed or erased to.