Nonvolatile memory device, storage device including nonvolatile memory device, and operating method of nonvolatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorJooyong Park
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device that performs a read operation during which row decoder circuitry applies a turn on voltage to a first ground selection line selected from a plurality of ground selection lines, applies a turn off voltage to at least one second ground selection line selected from the plurality of ground selection lines, the at least one second ground selection line being selected from the plurality of ground selection lines based on a read address associated with the read operation, and applies the turn off voltage to an unselected ground selection line among the plurality of ground selection lines after applying a prepulse voltage to the unselected ground selection line.
Claims20
A nonvolatile memory device comprising:
- a memory cell array including a plurality of cell strings arranged in rows and columns, each of the plurality of cell strings including a ground selection transistor among a plurality of ground selection transistors, one or more memory cells among a plurality of memory cells, and a string selection transistor among a plurality of string selection transistors;
- and
- row decoder circuitry connected to,
- the plurality of ground selection transistors through a plurality of ground selection lines,
- the plurality of memory cells through a plurality of word lines, and
- the plurality of string selection transistors through a plurality of string selection lines,
- the row decoder circuitry configured to control voltages supplied to the memory cell array during a read operation of reading data from selected memory cells among the plurality of memory cells, by,
- applying a turn on voltage to a first ground selection line selected from the plurality of ground selection lines,
- applying a turn off voltage to at least one second ground selection line selected from the plurality of ground selection lines, the at least one second ground selection line being selected from the plurality of ground selection lines based on a read address associated with the read operation, and
- applying the turn off voltage to an unselected ground selection line among the plurality of ground selection lines after applying a prepulse voltage to the unselected ground selection line.
A storage device comprising:
- a nonvolatile memory device including a plurality of memory blocks, each memory block including a plurality of memory cells and a plurality of selection transistors;
- and
- a controller configured to transmit to the nonvolatile memory device a read command and a read address, the read address identifying a selected memory block among the plurality of memory blocks and one or more selected memory cells among the plurality of memory cells of the selected memory block,
- the nonvolatile memory device including processing circuitry configured to control voltages supplied to the plurality of memory blocks in response to the read command in a first mode, by
- applying a turn on voltage to a plurality of first selection transistors associated with the read address among the plurality of selection transistors,
- applying a turn off voltage to a plurality of second selection transistors among the plurality of selection transistors, the plurality of second selection transistors being selected based on the read address, and
- applying the turn off voltage to a plurality of third selection transistors among the plurality of selection transistors, the plurality of third selection transistors being selected based on the read address after applying a prepulse voltage to the plurality of third selection transistors.
An operating method of a nonvolatile memory device including a plurality of memory cells and a plurality of selection transistors comprising:
- receiving a read command and a read address indicating one or more selected memory cells among the plurality of memory cells;
- and
- performing a read operation in response to the read command including,
- applying a turn on voltage to a plurality of first selection transistors associated with the read address among the plurality of selection transistors,
- applying a turn off voltage to a plurality of second selection transistors among the plurality of selection transistors, the plurality of second selection transistors being selected based on the read address, and
- applying the turn off voltage to a plurality of third selection transistors among the plurality of selection transistors, the plurality of third selection transistors being selected based on the read address after applying a prepulse voltage to the plurality of third selection transistors.
Dependencies are inferred from the claim text.