Method for programming a non-volatile memory device and corresponding non-volatile memory device
AssigneesSTMicroelectronics (Alps) SAS, Stmicroelectronics (Grenoble2) SAS
InventorsLeonardo Valencia Rissetto, Elise Le Roux, Christophe Forel
Life of this patent
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Abstract
A method can be used for programming a group of memory cells of a non-volatile memory device in a programming window that has a duration longer than a programming duration of a memory cell. The programming window is subdivided into a number of time intervals. A programming profile that was determined by simulation while taking into account a reference criterion is retrieved. The programming profile includes, for each time interval, a maximum number of memory cells that can be triggered for programming within each time interval. The memory device is programmed in the programming window, interval-wise, using the programming profile.
Claims23
A method for programming a group of N memory cells of a non-volatile memory device in a programming window that has a duration longer than a programming duration of a memory cell, N being a real number, the method comprising:
- subdividing the programming window into M time intervals, M being an integer greater than two;
- determining a programming profile that includes, for each time interval, a maximum number of memory cells that can be triggered for programming within the time interval, the programming profile being determined by simulation while taking into account a reference criterion;
- storing the programming profile in the memory device;
- and
- programming the memory device in the programming window, interval-wise, using the programming profile.
A method for programming a group of memory cells of a non-volatile memory device in a programming window that has a duration longer than a programming duration of a memory cell, the method comprising:
- subdividing the programming window into a plurality of time intervals;
- retrieving a programming profile that was determined by simulation while taking into account a reference criterion, the programming profile including, for each time interval, a maximum number of memory cells that can be triggered for programming within each time interval;
- and
- programming the memory device in the programming window, interval-wise, using the programming profile.
A non-volatile memory device comprising:
- a memory plane including memory cells;
- a register storing a programming profile that was determined by simulation while taking into account a reference criterion, the programming profile including, for each time interval of a number of time intervals in a programming window, a maximum number of memory cells that can be triggered for programming within each time interval, the programming window has a duration longer than a programming duration of a memory cell, the number of time intervals being an integer greater than two;
- and
- a programming circuit configured to program a group of N memory cells for the duration of the programming window according to the associated programming profile for each time interval in the programming window, N being a real number.
Dependencies are inferred from the claim text.