Memory device with a charge transfer device

A method, comprising:

• transferring, using a transistor, a charge between a digit line and a node coupled with a plurality of sense components during a read operation, wherein the charge is transferred based at least in part on a first voltage on the digit line being less than a second voltage on a gate of the transistor;
• sensing, by the plurality of sense components based at least in part on transferring the charge between the digit line and the node, a state of a memory cell that is configured to store three or more states, wherein sensing the state of the memory cell comprises sensing a signal at a first sense component of the plurality of sense components at a first time and sensing the signal at a second sense component of the plurality of sense components at a second time different than the first time, and wherein a ratio of the number of states read by the plurality of sense components and a number of the plurality of sense components is greater than one;
• and
• determining the state of the memory cell based at least in part on the ratio being greater than one.

A method, comprising:

• biasing a gate of a transistor to a second voltage;
• transferring, using the transistor and after biasing the gate of the transistor, a charge between a digit line and a node coupled with a plurality of sense components during a read operation, wherein the charge is transferred based at least in part on a first voltage on the digit line being less than the second voltage on the gate of the transistor;
• discharging a memory cell onto the digit line based at least in part on biasing the gate of the transistor to the second voltage, wherein the digit line is biased to the first voltage based at least in part on discharging the memory cell onto the digit line;
• sensing, by the plurality of sense components based at least in part on transferring the charge between the digit line and the node, a state of a memory cell that is configured to store three or more states, wherein a ratio of the number of states read by the plurality of sense components and a number of the plurality of sense components is greater than one;
• and
• determining the state of the memory cell based at least in part on the ratio being greater than one.

A method, comprising:

• transferring, using a transistor, a charge between a digit line and a node coupled with a plurality of sense components during a read operation, wherein the charge is transferred based at least in part on a first voltage on the digit line being less than a second voltage on a gate of the transistor;
• sensing, by the plurality of sense components based at least in part on transferring the charge between the digit line and the node, a state of a memory cell that is configured to store three or more states, wherein a ratio of the number of states read by the plurality of sense components and a number of the plurality of sense components is greater than one;
• and
• isolating the plurality of sense components from the digit line based at least in part on sensing the state of the memory cell;
• and
• determining the state of the memory cell based at least in part on the ratio being greater than one.

An apparatus, comprising:

• a memory cell coupled with a digit line and configured to store three or more states;
• a plurality of sense components coupled with a node;
• a first transistor coupled with the node and the digit line;
• a second transistor coupled with a gate of the first transistor and the node;
• and
• a controller coupled with the memory cell, the controller operable to:
• transfer, by the first transistor, a charge between the digit line and the node;
• apply, by the second transistor, a first voltage to the gate of the first transistor that compensates for a threshold voltage associated with the first transistor;
• sense, by the plurality of sense components, a state of the memory cell based at least in part on transferring the charge between the digit line and the node, wherein a ratio of a number of states read by the plurality of sense components to a number of the plurality of sense components comprises a ratio of 3:2, and
• determine the state of the memory cell based at least in part on the ratio being 3:2.