Page writes for triple level cell flash memory

A tangible, non-transitory, computer-readable media having instructions thereupon which, when executed by a processor, cause the processor to perform a method comprising:

• receiving data in a storage system, from a client that is uninvolved with page write requirements for differing types of multi level cell flash memory;
• gathering a sufficient amount of the data into random access memory (RAM) in the storage system to satisfy the page write requirements of a portion of triple level cell, or higher level cell, flash memory in the storage system as determined for the differing types of flash memory, the page write requirements providing an order for writing to pages of each of the differing types of flash memory;
• and
• sending the page write requirements of the portion of triple level cell, or the higher level cell, flash memory, from the RAM to a write sequencer in the storage system for writing as an atomic write to the portion of triple level cell, or the higher level cell, flash memory.

A system, comprising:

• a plurality of portions of flash memory, including a portion of triple level cell, or higher level cell, flash memory;
• a write sequencer, configurable to write pages to the plurality of portions of flash memory;
• and
• at least one processor, configurable to receive data from a client that is isolated from page write requirements for differing types of multi level cell flash memory, accrue a sufficient amount of data to satisfy the page write requirements of the portion of triple level cell as determined for each of the differing types of flash memory, the page write requirements providing an order for writing to pages of each of the differing types of flash memory, or the higher level cell, flash memory and send at least a lower page and an upper page to the write sequencer for writing to the portion of triple level cell, or higher level cell, flash memory as an atomic write.