Memory devices and methods of controlling an auto-refresh operation of the memory devices
AssigneeSK hynix Inc.
InventorsYoungjae Jin, Jin Wook Kim
Life of this patent
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Abstract
A memory device includes a memory medium and a memory controller. The memory medium has a memory cell array and may be configured to generate a self-refresh signal, which varies based on an internal temperature of the memory medium, to control a self-refresh operation performed on the memory cell array. The memory controller may be configured to calculate an auto refresh cycle of an auto refresh control signal for controlling an auto-refresh operation of the memory medium based on the self-refresh signal.
Claims16
A memory device comprising:
- a memory medium including a self-refresh controller, the self-refresh controller configured to control the performance of a self-refresh operation based on a self-refresh cycle varying according to an internal temperature of the memory medium;
- and
- a memory controller configured to generate an auto refresh control signal for an auto-refresh operation performed by the memory medium based on an auto-refresh cycle, the auto-refresh cycle determined by a self-refresh signal received from the memory medium, the self-refresh signal varied based on the internal temperature of the memory medium,
- wherein the self-refresh cycle is determined by comparing the self-refresh signal with a clock signal.
A method of controlling an auto-refresh operation of a memory device, the method comprising:
- performing a self-refresh operation based on a self-refresh cycle varying according to an internal temperature of a memory medium;
- generating a self-refresh signal in the memory medium;
- generating an auto-refresh signal having an auto-refresh cycle determined from the self-refresh signal varied by the internal temperature;
- and
- transmitting an auto-refresh control signal to the memory medium such that the memory medium performs the auto-refresh operation based on the auto-refresh cycle,
- wherein the auto-refresh control signal includes the auto-refresh signal, and
- wherein the self-refresh cycle is determined by comparing the self-refresh signal with a clock signal.
A memory device comprising:
- a memory medium including a memory cell array and configured to generate a self-refresh signal, which varies based on an internal temperature of the memory medium, to control a self-refresh operation performed on the memory cell array;
- and
- a memory controller configured to calculate an auto refresh cycle of an auto refresh control signal for controlling an auto-refresh operation of the memory medium based on the self-refresh signal,
- wherein the self-refresh cycle is determined by comparing the self-refresh signal with a clock signal.
Dependencies are inferred from the claim text.