Semiconductor storage device

A semiconductor storage device, comprising:

• a first wire extending in a first direction and having a first end in a first hookup region and a second end opposite the first end in the first direction;
• a second wire extending in a second direction intersecting the first direction;
• a third wire extending in the second direction and spaced from the second wire in the first direction;
• a first memory film between the first wire and the second wire at a first position along the first wire and having a first contact area;
• a second memory film between the first wire and the third wire at a second position along the first wire and having a second contact area greater than the first contact area, the first position being between the second position and the first end of the first wire in the first direction;
• a fourth wire extending in the first direction parallel to the first wire, the second and third wires being between the first and fourth wire in a third direction orthogonal to the first and second directions, a first end of the fourth wire being in a second hookup region separated from the first hookup region in the first direction;
• a third memory film between the fourth wire and the second wire at a third position along the fourth wire and having a third contact area;
• and a fourth memory film between the fourth wire and the third wire at a fourth position along the fourth wire and having a fourth contact area less than the third contact area, the fourth position being between the third position and the first end of the fourth wire in the first direction.

A semiconductor storage device, comprising:

• a first wire extending in a first direction from a hookup region to a second end;
• a second wire extending in the first direction from the hookup region, the first and second wires being spaced from each other in a second direction intersecting the first direction;
• a plurality of third wires extending in a third direction orthogonal to the first and second direction, the third wires being between the first and second wires in the second direction and spaced from one another along the first direction;
• a plurality of first memory films respectively between the first wire and each third wire;
• a plurality of second memory films respectively between the second wire and each third wire, wherein
• a contact area of a first memory film on a third wire adjacent to the hookup region is less than a contact area of a first memory film on a third wire nearer the second end.