Deposition device and deposition method
AssigneeTokyo Electron Limited
InventorsKatsuhito Hirose, Kunihiro Tada, Kenji Suzuki, Takeshi Shinohara
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorsKatsuhito Hirose, Kunihiro Tada, Kenji Suzuki, Takeshi Shinohara
Estimating the term…
A film deposition device includes a reaction gas supply part which is in communication with a process space defined between a placement part and a ceiling part. An annular gap in a plan view exists between an outer peripheral portion of the placement part and an outer peripheral portion of the ceiling part in circumferential directions of the placement part and the ceiling part. A reaction gas supplied from the reaction gas supply part into the process space via the ceiling part flows outside of the process space via the annular gap. A plurality of gas flow channels, which is used for forming gas-flow walls, is formed in the outer peripheral portion of the ceiling part which provides the annular gap.
A film deposition device, comprising:
Dependencies are inferred from the claim text.