US 10,811,841 B2Granted

Split-electrode vertical cavity optical device

AssigneePOET Technologies, Inc.

InventorGeoff W. Taylor

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Abstract

A split electrode vertical cavity optical device includes an n-type ohmic contact layer, first through fifth ion implant regions, cathode and anode electrodes, first and second injector terminals, and p and n type modulation doped quantum well structures. The cathode electrode and the first and second ion implant regions are formed on the n-type ohmic contact layer. The third ion implant region is formed on the first ion implant region and contacts the p-type modulation doped QW structure. The fourth ion implant region encompasses the n-type modulation doped QW structure. The first and second injector terminals are formed on the third and fourth ion implant regions, respectively. The fifth ion implant region is formed above the n-type modulation doped QW structure and the anode electrode is formed above the fifth ion implant region.

Claims20

Dependent claims

A semiconductor device comprising:

an n-type ohmic contact layer formed above a substrate;
a cathode electrode formed on a first region of the n-type ohmic contact layer;
a first ion implant region formed in a second region of the n-type ohmic contact layer,
wherein the first ion implant region forms a circular curve configured to have a gap between two ends of the circular curve,
wherein the gap is positioned adjacent to the cathode electrode;
a p-type modulation doped quantum well (QW) structure formed on or above the first ion implant region;
a second ion implant region formed on a first half side of the semiconductor device,
wherein the first half side has a half circular top profile,
wherein the second ion implant region contacts the p-type modulation doped QW structure;
a first spacer layer formed above the p-type modulation doped QW structure;
an n-type modulation doped QW structure formed above the first spacer layer;
a third ion implant region formed on a second half side of the semiconductor device,
wherein the second half side has a half circular top profile opposite the first half side,
wherein the third ion implant region contacts the n-type modulation doped QW structure;
a fourth ion implant region formed above the n-type modulation doped QW structure and on the first half side;
and
an anode electrode formed above the fourth ion implant region and on the first half side.

14 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/450,351Filed 6 Mar 2017 · continuation
Priority: 29 Jan 2014
Published: US 2017/0221995 A13 Aug 2017
Granted: 20 Oct 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification52 codes

H01S 5/1071
Construction or shape of the optical resonator , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or…:…
G02B 6/131
Integrated optical circuits characterised by the manufacturing method: by using epitaxial growth
G02B 6/1347
By substitution by dopant atoms: using ion implantation
G02B 6/29338
Evanescent coupling to a resonator cavity, i.e. between a waveguide mode and a resonant mode of the cavity: loop resonators

Family

Application61/962,303Us provisional application · filed 29 Jan 2014
Application14/222,841Parent of this continuation · filed 24 Mar 2014
US 2017/0221995 A1Pre-grant publication · published 3 Aug 2017
US 9,625,647 B2Parent of this continuation
US 2015/0214425 A1Published application
US 10,811,841 B2This patent

From the US filing history. Foreign family members aren’t listed.