Back to results
US 10,811,597 B2Granted
Magnetoresistive stack/structure and methods therefor
AssigneeEverspin Technologies, Inc.
InventorJijun Sun
Life of this patent
Estimating the term…
Abstract
A magnetoresistive device with a magnetically fixed region having at least two ferromagnetic regions coupled together by an antiferromagnetic coupling region. At least one of the two ferromagnetic regions includes multiple alternating metal layers and magnetic layers and one or more interfacial layers. Wherein, each metal layer includes at least one of platinum, palladium, nickel, or gold, and the interfacial layers include at least one of an oxide, iron, or an alloy including cobalt and iron.
Claims20
A magnetoresistive device comprising:
- an intermediate region including a dielectric material;
- a magnetically free region on one side of the intermediate region;
- and
- a magnetically fixed region on a side of the intermediate region opposite to the magnetically free region, the magnetically fixed region including at least two ferromagnetic regions coupled together by an antiferromagnetic coupling region, wherein at least one of the two ferromagnetic regions includes:
- multiple alternating metal layers and magnetic layers, wherein each metal layer includes at least one of platinum, palladium, nickel, or gold;
- and
- one or more interfacial layers including at least one of an oxide, iron, or an alloy including cobalt and iron.
4 more elements
A method of forming a magnetoresistive device, comprising:
- forming a magnetically free region on one side of a dielectric region;
- and
- forming a magnetically fixed region on a side of the dielectric region opposite to the magnetically free region, wherein forming the magnetically fixed region includes:
- forming a first ferromagnetic region;
- forming a second ferromagnetic region;
- and
- forming an antiferromagnetic coupling region between the first and the second ferromagnetic regions, wherein forming the first ferromagnetic region and/or forming the second ferromagnetic region includes:
- forming multiple alternating metal layers and magnetic layers, wherein each metal layer includes at least one of platinum, palladium, nickel, or gold;
- and
- forming one or more interfacial layers, wherein the one or more interfacial layers include at least one of an oxide, iron, or an alloy including cobalt and/or iron.
7 more elements
Dependencies are inferred from the claim text.