Method for making superlattice structures with reduced defect densities
AssigneeAtomera Incorporated
InventorsKeith Doran Weeks, Nyles Wynn Cody, Marek Hytha, Robert J. Mears, Robert John Stephenson
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Abstract
A method for making a semiconductor device may include forming a superlattice on a substrate comprising a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Moreover, forming at least one of the base semiconductor portions may include overgrowing the at least one base semiconductor portion and etching back the overgrown at least one base semiconductor portion.
Claims16
A method for making a semiconductor device comprising:
- forming a superlattice on a substrate comprising a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
- wherein forming at least one of the base semiconductor portions comprises overgrowing the at least one base semiconductor portion and etching back the overgrown at least one base semiconductor portion.
A method for making a semiconductor device comprising:
- forming a superlattice on a substrate comprising a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
- and
- forming a semiconductor cap layer on the superlattice;
- wherein forming each of the base semiconductor portions further comprises forming a first set of the base semiconductor monolayers, performing a thermal anneal, and forming a second set of the base semiconductor monolayers on the first set after the thermal anneal;
- wherein forming at least one of the base semiconductor portions comprises overgrowing the at least one base semiconductor portion and etching back the overgrown at least one base semiconductor portion.
Dependencies are inferred from the claim text.