Method of cleaning and drying semiconductor substrate

A method of cleaning and drying a semiconductor substrate onto which a pattern has been formed, which comprises:

• (I) cleaning the semiconductor substrate onto which a pattern has been formed with a cleaning solution,
• (II) replacing the cleaning solution that remained on the semiconductor substrate with a composition comprising a resin (A) that comprises a repeating unit having an acetal structure represented by the following general formula (1) and a solvent, and removing the solvent in the replaced composition by heating at a temperature lower than a decomposition temperature of the resin (A), and
• (III) blowing a gas having a temperature equal to or higher than the decomposition temperature of the resin (A) to the resin (A) on the semiconductor substrate while maintaining a temperature of the semiconductor substrate onto which a pattern has been formed to 0° C. or higher and lower than the decomposition temperature of the resin (A), to decompose and remove the resin (A) from a side of a surface contacting with the gas,
• wherein R1 represents a hydrogen atom or a saturated or unsaturated monovalent organic group having 1 to 30 carbon atoms which may be substituted;
• and W represents a saturated or unsaturated divalent organic group having 2 to 30 carbon atoms,
• wherein the gas that is blown to the resin (A) is water vapor or water vapor that comprises a gas that acidifies an aqueous solution,
• wherein a pressure of the water vapor is made equal to, or lower than, a saturated vapor pressure of the water vapor at the temperature of the gas in (III).