Mn—Zn—O sputtering target and production method therefor
AssigneeDexerials Corporation
InventorsJunichi Sugawara, Yuichi Kamori
Life of this patent
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Abstract
Provided is a Mn—Zn—O sputtering target which can be used in DC sputtering, and a production method for the target. The Mn—Zn—O sputtering target comprises a chemical composition containing Mn, Zn, O, and at least one element X, the element X being a single one or two elements selected from the group consisting of W and Mo. The target has a relative density of 90% or more and a specific resistance of 1×10−3 Ω·cm or less.
Claims4
A Mn—Zn—O sputtering target comprising a chemical composition consisting essentially of Mn, Zn, O, and at least one element X, the element X being a single one or two elements selected from the group consisting of W and Mo,
- wherein a relative density of the target is 90% or more and a specific resistance thereof is 1×10−3 Ω·cm or less, and
- the chemical composition contains Mn:
- 4 at % to 40 at %, Zn:
- 15 at % to 60 at %, and the element X:
- 5 at % to 40 at % with respect to the total 100 at % of Mn, Zn, and the element X.
Dependencies are inferred from the claim text.