Spatially variable wafer bias power system

A power system with plasma load comprising:

• a first high voltage pulser that outputs a first plurality of pulses having a first voltage greater than about 1 kV, a first pulse width less than about 1 μs, and a first pulse repletion frequency greater than about 20 kHz;
• a second high voltage pulser that outputs a second plurality of pulses having a second voltage greater than about 1 kV, a second pulse width less than about 1 μs, and a second pulse repletion frequency greater than about 20 kHz;
• a chamber;
• a first electrode disposed within the chamber and electrically coupled with the first high voltage pulser;
• and
• a second electrode disposed within the chamber adjacent with the first electrode and electrically coupled with the second high voltage pulser;
• wherein the chamber includes either or both a wafer and a plasma that is capacitively coupled with the first electrode and the second electrode with a capacitance between 10 pF and 1 μF.