Semiconductor device with nanostructures and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Hsiang Tseng, Chih-Fei Lee, Chia-Pin Cheng, Fu-Cheng Chang
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Abstract
A method of forming a semiconductor device includes forming a photo sensing region in a semiconductor substrate, wherein the semiconductor substrate is of a first type dopant and the photo sensing region is of a second type dopant that has a different conductivity type than the first type dopant; forming a nanostructure layer in contact with an interface between the photo sensing region and the semiconductor substrate; and etching the nanostructure layer until exposing the photo sensing region to form a plurality of nanostructures.
Claims20
A method of forming a semiconductor device, comprising:
- forming a photo sensing region in a semiconductor substrate, wherein the semiconductor substrate is of a first type dopant and the photo sensing region is of a second type dopant that has a different conductivity type than the first type dopant;
- forming a nanostructure layer in contact with an interface between the photo sensing region and the semiconductor substrate;
- and
- etching the nanostructure layer until exposing the photo sensing region to form a plurality of nanostructures.
A method of forming a semiconductor device, comprising:
- forming a photo sensing region in a semiconductor substrate, wherein the semiconductor substrate is of a first type dopant and the photo sensing region is of a second type dopant that has a different conductivity type than the first type dopant;
- removing portions of the photo sensing region to form a plurality of recesses;
- filling a material into the recesses;
- and
- planarizing the material until exposing the photo sensing region to form a plurality of nanostructures.
A method of forming a semiconductor device, comprising:
- forming a photo sensing region in a semiconductor substrate, wherein the semiconductor substrate is of a p-type dopant and the photo sensing region is of a n-type dopant;
- forming a nanostructure layer above the photo sensing region, wherein a width of the nanostructure layer is wider than a width of the photo sensing region;
- etching the nanostructure layer to form a plurality of nanostructures;
- and
- forming a light filter layer over the nanostructures.
Dependencies are inferred from the claim text.