Spintronic accelerometer
AssigneeHoneywell International Inc.
InventorRomney R. Katti
Life of this patent
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Abstract
A magnetic tunnel junction (MTJ) based sensor device includes a MTJ element and processing circuitry. The MTJ element includes a free layer, a pinned layer, and a tunnel barrier, the tunnel barrier being arranged between the free layer and the pinned layer. The free layer is adapted to flex away from the tunnel barrier during acceleration. The processing circuitry is configured to measure a resistance at the MTJ element and determine acceleration based on the resistance at the MTJ element.
Claims20
A magnetic tunnel junction (MTJ) based sensor device, the device comprising:
- a MTJ element comprising a free layer, a pinned layer, and a tunnel barrier, the tunnel barrier being arranged between the free layer and the pinned layer, wherein the free layer is adapted to flex away from the tunnel barrier during acceleration;
- and
- processing circuitry configured to:
- measure a resistance at the MTJ element;
- and
- determine acceleration based on the resistance at the MTJ element.
A method for detecting acceleration using a magnetic tunnel junction (MTJ) based sensor device, the method comprising:
- measuring, by processing circuitry, a resistance at a MTJ element, wherein the MTJ element comprises a free layer, a pinned layer, and a tunnel barrier, the tunnel barrier being arranged between the free layer and the pinned layer, and wherein the free layer is adapted to flex away from the tunnel barrier during acceleration;
- and
- determining, by the processing circuitry, acceleration based on the resistance at the MTJ element.
A magnetic tunnel junction (MTJ) based sensor device, the device comprising:
- means for measuring a resistance at a MTJ element, wherein the MTJ element comprises a free layer, a pinned layer, and a tunnel barrier, the tunnel barrier being arranged between the free layer and the pinned layer, and wherein the free layer is adapted to flex away from the tunnel barrier during acceleration;
- and
- means for determining acceleration based on the resistance at the MTJ element.
Dependencies are inferred from the claim text.