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US 10,802,008 B2Granted
Bimetal doped-metal oxide-based chemical sensors
AssigneeVaon, LLC
InventorsVladimir Dobrokhotov, Alexander Larin
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Abstract
The present invention generally relates to bimetal-doped, metal oxide-based sensors and platforms and integrated chemical sensors incorporating the same, methods of making the same, and methods of using the same.
Claims20
A chemical sensor platform, comprising:
- (a) an oxidized silicon membrane, comprising a silicon (Si) layer and a silicon oxide (SiO2) layer, wherein the SiO2 layer is located on top of the silicon layer and, comprises:
- a plurality of separate sensor areas;
- (b) at least one heating element in contact with the SiO2 layer and located near at least one edge of each sensor area;
- (c) a plurality of pairs of electrical leads, each in contact with the SiO2 layer, wherein one pair of electrical leads is at least partly located on each of the separate sensor areas;
- (d) a plurality of metal oxide layers, wherein one metal oxide layer is located on each of the plurality of sensor areas and is in contact with at least a part of the pair of electrical leads located on the same area;
- (e) a plurality of bimetal layers, wherein one bimetal layer is located in each sensor area and is in contact with the metal oxide layer in that area, wherein the bimetal layer, comprises:
- Au and Pd or Au and Pt;
- and
- (f) a plurality of Si/SiO2 connectors that are configured to provide membrane support and temperature insulation of the membrane.
6 more elements
Dependencies are inferred from the claim text.