Spectroscopic focal plane array and method of making same
AssigneeTeledyne Scientific & Imaging, LLC
InventorMajid Zandian
Life of this patent
Estimating the term…
Abstract
A semiconductor material emitting device is positioned such that its output flux impinges on a substrate at a non-perpendicular angle, so as to grow a first epilayer which is linearly graded in the direction perpendicular to the growth direction. The linear grading can be arranged such that, for example, each row of pixels has a different cutoff wavelength, thereby making it possible to provide a spectroscopic FPA without the use of filters. The non-perpendicular angle and/or the flux intensity can be adjusted to achieve a desired compositional grading. A spectral ellipsometer may be used to monitor the composition of the epilayer during the fabrication process, and to control the intensity of the flux.
Claims14
A method of providing a linearly graded epilayer on a semiconductor substrate, comprising:
- providing a semiconductor substrate;
- providing a semiconductor material emitting device which outputs a flux having a predetermined composition and which creates epitaxial growth when directed at a substrate, wherein said semiconductor substrate is not rotated during said epitaxial growth;
- and
- positioning said semiconductor material emitting device such that said flux impinges on said semiconductor substrate at a non-perpendicular angle to grow a first epilayer on said substrate which is linearly graded in the direction perpendicular to the growth direction and parallel to said semiconductor substrate;
- wherein said first epilayer is adapted for a row and column array of pixels, such that the array's cutoff wavelength is made to vary linearly across the array in the direction perpendicular to the growth direction.
Dependencies are inferred from the claim text.