Method for controlling heat flow within a silicon melt using a heat diffusion barrier assembly

A method to process a melt comprising:

• providing the melt in a crucible, the melt having an exposed surface;
• providing heat through the melt to the exposed surface by heating a first side of the crucible opposite the exposed surface with a heater;
• and
• providing within the crucible a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt, wherein the heat diffusion barrier assembly is disposed below the exposed surface, and wherein the heater is disposed to generate in the isolation region a first heat flow density at the exposed surface, and is arranged to generate in the outer region a second heat flow density at the exposed surface, less than the first heat flow density, wherein the heat diffusion barrier assembly comprises a first heat diffusion barrier and second heat diffusion barrier that are angled, wherein the isolation region is wider toward a bottom of the crucible, wherein top portions of the first and second heat diffusion barriers are free and unattached to other structures such that the melt is disposed between the first heat diffusion barrier and the second heat diffusion barrier at a top portion of the diffusion barrier assembly;
• wherein the melt is composed of silicon, and wherein a first portion of the heat that flows through the isolation region to the exposed surface has a first heat flow density that is greater than a second heat flow density for a second portion of the heat that flows from the isolation region through the first and second heat diffusion barriers to the outer region.