Method for protecting a MEMS unit against infrared investigations and MEMS unit
AssigneeRobert Bosch GmbH
InventorsMichael Curcic, Oliver Willers, Sven Zinober, Ulrich Kunz
Life of this patent
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Abstract
A method for protecting a MEMS unit, in particular a MEMS sensor, against infrared investigations, at least one area of the MEMS unit being doped, the at least one doped area absorbing, reflecting or diffusely scattering more than 50%, in particular more than 90%, of an infrared light incident upon it.
Claims13
A method for protecting a MEMS unit against infrared investigations, comprising:
- doping at least one area of the MEMS unit, the at least one doped area one of absorbing, reflecting or diffusely scattering more than 50% of an infrared light incident upon it;
- wherein the at least one area is doped prior to a bonding of parts of the MEMS unit;
- wherein the MEMS unit includes a base structure, a sensor structure, a cavity, and a sensor cap.
A method for protecting a MEMS unit against infrared investigations, comprising:
- doping at least one area of the MEMS unit, the at least one doped area one of absorbing, reflecting or diffusely scattering more than 50% of an infrared light incident upon it;
- wherein the at least one area is doped prior to a bonding of parts of the MEMS unit;
- and
- wherein the at least one area includes an area of the MEMS unit bordering a cavity in an interior of the MEMS unit.
A method for protecting a MEMS unit against infrared investigations, comprising:
- doping at least one area of the MEMS unit, the at least one doped area one of absorbing, reflecting or diffusely scattering more than 50% of an infrared light incident upon it;
- wherein the at least one area is doped after production of the MEMS unit, the at least one area including at least portions of an outer surface of the MEMS unit;
- wherein the MEMS unit includes a base structure, a sensor structure, a cavity, and a sensor cap.
A method for protecting a MEMS unit against infrared investigations, comprising:
- doping at least one area of the MEMS unit, the at least one doped area one of absorbing, reflecting or diffusely scattering more than 50% of an infrared light incident upon it;
- wherein the at least one area is doped one of:
- (i) by way of ion implantation, or (ii) by way of deposition methods;
- wherein the at least one area includes an area of the MEMS unit bordering a cavity in an interior of the MEMS unit.
A MEMS unit having at least one doped area, which one of absorbs, reflects or diffusely scatters more than 50% of an irradiated infrared light, the MEMS unit further comprising a base structure, a sensor structure, a cavity, and a sensor cap.
Dependencies are inferred from the claim text.