Distortion-compensated wafer bonding method and apparatus using a temperature-controlled backside thermal expansion layer

Abstract

A bonded structure may be formed by measuring die areas of first semiconductor dies on a wafer at a measurement temperature, generating a two-dimensional map of local target temperatures that are estimated to thermally adjust a die area of each of the first semiconductor dies to a target die area, loading the wafer to a bonding apparatus comprising at least one temperature sensor, and iteratively bonding a plurality of second semiconductor dies to a respective one of the first semiconductor dies by sequentially adjusting a temperature of the wafer to a local target temperature of a respective first semiconductor die that is bonded to a respective one of the second semiconductor dies. An apparatus for forming such a bonded structure may include a computer, a chuck for holding the wafer, a die attachment unit, and a temperature control mechanism.

Dependencies are inferred from the claim text.