3D defect characterization of crystalline samples in a scanning type electron microscope

A method of 3D defect characterization of crystalline samples in a scanning type electron microscope, said scanning type electron microscope comprising:

• a sample stage for holding a sample;
• an electron source for producing a primary electron beam, as well as an illuminator having an electron-optical axis, wherein said electron microscope is arranged for directing said primary electron beam through the illuminator so as to irradiate said sample for producing an interaction that causes particle radiation to emerge from the sample, said radiation including backscattered electrons (BSEs);
• and
• at least one detector for detecting said BSEs;
• wherein said method comprises the step of:
• irradiating said sample-provided on said stage;
• selecting one set of crystal lattice planes of the sample;
• orienting said set of crystal lattice planes to a first Bragg condition with respect to the primary electron beam impinging on said sample;
• obtaining by means of said at least one detector a first Electron Channeling Contrast Image for a first area of interest on the sample;
• orienting the set of crystal lattice planes to a second Bragg condition, by at least tilting the sample stage about a first tilt axis;
• obtaining by means of said at least one detector a second Electron Channeling Contrast Image for a second area of interest on the sample while maintaining said second Bragg condition, wherein said second area of interest at least partly overlaps a previously selected area of interest;
• wherein at least one of (i) the orienting the set of crystal lattice planes to the first Bragg condition and (ii) the orienting the set of crystal lattice planes to the second Bragg condition is performed based at least in part on an observed image, the observed image corresponding to an Electron Channeling Pattern or an Electron Back-Scattered Pattern acquired by one of the detectors.