# US 10,777,429 B2 · Method of production of a structure including a high thermal conductivity substrates and devices on it > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,777,429 B2 - Document ID: US10777429B2 - Status: Granted - Kind: B2 - Application number: 16/162,603 - Filed: 2018-10-17 - Published: 2019-05-23 - Granted: 2020-09-15 - Earliest claimed: 2017-10-24 - Assignees: Icdat Ltd. - Applicants: Icdat Ltd. 5 - Inventors: Joseph Kaplun; Adam Hoffman - Web page: https://patentgrep.com/patent/US10777429B2 ## CPC - H10W 95/00: Packaging processes not covered by the other groups of this subclass - H10P 72/74: {using temporarily an auxiliary support} - H10W 40/10: Arrangements for heating - H10W 90/00: Package configurations - H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT} - H10D 64/254: {for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts} - H10P 72/7412: {the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support} - H10P 72/7428: {used to support diced chips prior to mounting} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract There may be provided a method for generating a structure, the method may include receiving multiple donor structures that comprise multiple mesas; placing the multiple donor structures on a substrate that lacks a semiconductor layer that covers the entire substrate; and performing a manufacturing process that comprises coupling the multiple mesas to the substrate. ## Claims ### Claim 1 A method for generating a structure, the method comprises: receiving multiple donor structures that comprise multiple mesas; wherein each mesa comprises at least a portion of an active semiconductor device; placing the multiple donor structures on a substrate that lacks a semiconductor layer that covers the entire substrate; and performing a manufacturing process that comprises coupling the multiple mesas to the substrate. ### Claim 2 (depends on 1) The method according to claim 1 wherein the performing of the manufacturing process comprises forming a photoresist layer above the multiple mesas; and removing the photoresist layer thereby exposing the multiple mesas. ### Claim 3 (depends on 1) The method according to claim 1 wherein the performing of the manufacturing process comprises forming masking elements above the multiple donor structures and removing the masking elements from the multiple donor structures. ### Claim 4 (depends on 1) The method according to claim 1 wherein the performing of the manufacturing process comprises forming structural elements and electrically coupling the multiple mesas to structural elements. ### Claim 5 (depends on 1) The method according to claim 1 wherein the performing of the manufacturing process comprises electrically coupling at least some of the multiple mesas to each other. ### Claim 6 (depends on 1) The method according to claim 1 wherein the performing of the manufacturing process comprises performing front size process that comprises adding front side processing structural elements. ### Claim 7 (depends on 1) The method according to claim 1 wherein the performing of the manufacturing process comprises performing a backside process that comprises adding backside processing structural elements. ### Claim 8 (depends on 1) The method according to claim 1 wherein an aggregate size of the multiple mesas is less than ten percent of an area of the substrate. ### Claim 9 (depends on 1) The method according to claim 1 wherein an aggregate size of the multiple mesas is less than one percent of an area of the substrate. ### Claim 10 (depends on 1) The method according to claim 1 wherein the substrate exhibits a thermal conductivity that exceeds 250 Watt/(Kelvin*meter). ### Claim 11 (depends on 1) The method according to claim 1 wherein the substrate exhibits a thermal conductivity that exceeds 1000 Watt/(Kelvin*Meter). ### Claim 12 (depends on 1) The method according to claim 1 wherein the substrate is a monocrystalline substrate. ### Claim 13 (depends on 1) The method according to claim 1 wherein the substrate is made of one or more materials that differ from silicon. ### Claim 14 (depends on 1) The method according to claim 1 comprises generating the multiple donor structures. ### Claim 15 A method for generating a structure, the method comprises: receiving multiple donor structures that comprise multiple mesas; placing the multiple donor structures on a substrate that lacks a semiconductor layer that covers the entire substrate; and performing a manufacturing process that comprises coupling the multiple mesas to the substrate; wherein each donor structure comprises a sacrificial layer. ### Claim 16 A structure that comprises mesas that are electrically coupled to a substrate, wherein the structure is manufactured by (a) receiving multiple donor structures that comprise multiple mesas; wherein each mesa comprises at least a portion of an active semiconductor device; (b) placing the multiple donor structures on a substrate that lacks a semiconductor layer that covers the entire substrate; and (c) performing a manufacturing process that comprises coupling the multiple mesas to the substrate.