Implantation using solid aluminum iodide (ALI3) for producing atomic aluminum ions and in situ cleaning of aluminum iodide and associated by-products

An ion implantation system, comprising:

• an ion source configured to form an ion beam from aluminum iodide, wherein the ion beam is comprised of aluminum ions;
• a water introduction apparatus configured to introduce water vapor to the ion implantation system;
• a beamline assembly configured to selectively transport the ion beam;
• and
• an end station configured to accept the ion beam for implantation of the aluminum ions into a workpiece.

A method for implanting aluminum ions into a workpiece, the method comprising:

• vaporizing a solid aluminum iodide source material, therein defining a vaporized aluminum iodide source material;
• providing the vaporized aluminum iodide source material to an ion source of an ion implantation system;
• ionizing the aluminum iodide source material in the ion source;
• extracting an ion beam containing aluminum ions from the ion source;
• and
• directing the ion beam toward the workpiece, thereby implanting the aluminum ions into the workpiece;
• forming one or more of residual aluminum iodide and hydroiodic acid on one or more internal components of the ion implantation system;
• and
• cleaning one or more of the residual aluminum iodide and hydroiodic acid from the one or more internal components of the ion implantation system, wherein cleaning one or more of the residual aluminum iodide and hydroiodic acid comprises introducing water vapor to the internal components of the ion implantation system and evacuating the ion implantation system, therein substantially removing the water vapor and residual aluminum iodide and hydroiodic acid.