# US 10,771,720 B2 · Solid-state imaging device having a photoelectric converter with multiple semiconductor regions, imaging system and movable object > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,771,720 B2 - Document ID: US10771720B2 - Status: Granted - Kind: B2 - Application number: 15/837,414 - Filed: 2017-12-11 - Published: 2018-06-28 - Granted: 2020-09-08 - Earliest claimed: 2016-12-28 - Assignees: Canon Kabushiki Kaisha - Applicants: Canon Kabushiki Kaisha - Inventors: Mahito Shinohara - Web page: https://patentgrep.com/patent/US10771720B2 ## CPC - H04N 25/70: SSIS architectures; Circuits associated therewith - H10F 39/196: {Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors} - H10F 39/80: {Constructional details of image sensors} - H10F 39/8027: {Geometry of the photosensitive area} - H10F 39/8033: {Photosensitive area} - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/807: {Pixel isolation structures} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract A solid-state imaging device includes a plurality of pixels, each of the plurality of pixels including a photoelectric converter. The photoelectric converter includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided under the first semiconductor region, and a third semiconductor region of the first conductivity type provided under the second semiconductor region. The second semiconductor region has a first end portion and a second end portion opposing to the first end portion. The third semiconductor region has a first region and a second region overlapping with the second semiconductor region in a plan view, and the first region and the second region are spaced apart from each other from a part of the first end portion to a part of the second end portion. ## Claims ### Claim 1 A solid-state imaging device comprising: a plurality of pixels, each of the plurality of pixels including a photoelectric converter, wherein the photoelectric converter includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided under the first semiconductor region, and a third semiconductor region of the first conductivity type provided under the second semiconductor region, wherein the second semiconductor region has a first end portion and a second end portion opposing to the first end portion, wherein the third semiconductor region has a first region and a second region, each of the first region and the second region overlaps with the second semiconductor region in a plan view, and the first region and the second region are spaced apart from each other from a part of the first end portion to a part of the second end portion, and wherein a semiconductor region provided between the first region and the second region of the third semiconductor region overlaps with the part of the first end portion and the part of the second end portion in the plan view and is provided to be extended from the part of the first end portion to the part of the second end portion in the plan view. ### Claim 2 (depends on 1) The solid-state imaging device according to claim 1, wherein a gap between the first region and the second region is arranged so as to traverse the second semiconductor region in the plan view. ### Claim 3 (depends on 1) The solid-state imaging device according to claim 1, wherein a gap between the first region and the second region is surrounded by the third semiconductor region in the plan view. ### Claim 4 (depends on 1) The solid-state imaging device according to claim 1, wherein the photoelectric converter is provided between the first semiconductor region and the second semiconductor region and further includes a fourth semiconductor region of the first conductivity type at least a part of which overlaps with a gap between the first region and the second region in the plan view. ### Claim 5 (depends on 1) The solid-state imaging device according to claim 1, wherein the photoelectric converter further includes a fifth semiconductor region of the second conductivity type provided in a depth between the second semiconductor region and the third semiconductor region in the same region in the plan view as a region in which the third semiconductor region is provided. ### Claim 6 (depends on 1) The solid-state imaging device according to claim 1, wherein each of the plurality of pixels further includes a charge holding portion and further includes a transfer transistor that transfers charges from the photoelectric converter to the charge holding portion, and wherein a gap between the first region and the second region does not overlap with a gate electrode of the transfer transistor in the plan view. ### Claim 7 (depends on 1) The solid-state imaging device according to claim 1, wherein a gap between the first region and the second region is arranged in a center portion of the second semiconductor region in the plan view. ### Claim 8 (depends on 1) The solid-state imaging device according to claim 1, wherein the photoelectric converter is provided in a sixth semiconductor region of the second conductivity type. ### Claim 9 (depends on 8) The solid-state imaging device according to claim 8, wherein the photoelectric converter is provided in a semiconductor substrate of the second conductivity type, and wherein the sixth semiconductor region is electrically isolated from other portions of the semiconductor substrate by a seventh semiconductor region of the first conductivity type. ### Claim 10 (depends on 1) The solid-state imaging device according to claim 1, wherein the photoelectric converter is provided in an eighth semiconductor region of the first conductivity type provided in a semiconductor substrate of the second conductivity type. ### Claim 11 (depends on 1) An imaging system comprising: the solid-state imaging device according to claim 1; and a signal processing unit that processes a signal output from the pixel of the solid-state imaging device. ### Claim 12 (depends on 1) A movable object comprising: the solid-state imaging device according to claim 1; a distance information acquisition unit configured to acquire distance information of a distance to an object, from parallax images based on a signal from the solid-state imaging device; and a control unit configured to control the movable object based on the distance information.