# US 10,771,719 B2 · Imaging element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,771,719 B2 - Document ID: US10771719B2 - Status: Granted - Kind: B2 - Application number: 16/318,650 - Filed: 2017-07-14 - Published: 2019-07-18 - Granted: 2020-09-08 - Earliest claimed: 2016-07-28 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: Toshiyuki Nishihara; Tomohiro Takahashi; Masao Matsumura; Tsutomu Imoto - Web page: https://patentgrep.com/patent/US10771719B2 ## CPC - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H04N 25/532: by controlling global shutters in CMOS SSIS - H04N 25/60: Noise processing, e.g. detecting, correcting, reducing or removing noise - H04N 25/616: involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling - H04N 25/65: applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS - H04N 25/671: for non-uniformity detection or correction - H04N 25/70: SSIS architectures; Circuits associated therewith - H04N 25/75: Circuitry for providing, modifying or processing image signals from the pixel array - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - H04N 25/771: comprising storage means other than floating diffusion - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H04N 25/79: Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors - H10F 39/12: Image sensors - H10F 39/809: {of hybrid image sensors} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element. ## Claims ### Claim 1 An imaging element, comprising: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; a second reset element that resets the second amplification element; a differential amplifier, wherein an output signal from the second amplification element and a reference signal are input to the differential amplifier, and wherein an output from the differential amplifier is supplied to the second reset element. ### Claim 2 (depends on 1) The imaging element according to claim 1, wherein the offset element is a capacitor. ### Claim 3 (depends on 1) The imaging element according to claim 1, wherein a charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. ### Claim 4 (depends on 1) The imaging element according to claim 1, wherein the differential amplifier includes the second reset element and a current mirror circuit. ### Claim 5 (depends on 1) The imaging element according to claim 1, wherein an input parasitic capacitance of the second amplification element is larger than an input parasitic capacitance of the first amplification element. ### Claim 6 (depends on 1) The imaging element according to claim 1, wherein after the first amplification element is reset by the first reset element, the second amplification element is reset by the second reset element. ### Claim 7 (depends on 1) The imaging element according to claim 1, wherein charge transfer and resetting of the photoelectric conversion element are performed in the same period. ### Claim 8 (depends on 1) The imaging element according to claim 1, further comprising a detection unit that detects a signal from the second amplification element, wherein the detection unit performs sampling of each of a reset signal and an accumulated signal, including processing of correlated double sampling. ### Claim 9 (depends on 8) The imaging element according to claim 8, wherein the detection unit considers a predetermined row as a processing target and performs sampling of a reset signal from the predetermined row, and performs sampling of accumulated signals from all the rows including the predetermined row. ### Claim 10 (depends on 1) The imaging element according to claim 1, further comprising a detection unit that detects a signal from the second amplification element, wherein the detection unit does not perform sampling of a reset signal and only performs sampling of an accumulated signal, including processing of correlated double sampling. ### Claim 11 (depends on 1) The imaging element according to claim 1, wherein the photoelectric conversion element, the first amplification element, and the first reset element are formed in a first layer, the offset element, the second amplification element, and the second reset element are formed in a second layer, and the first layer and the second layer are stacked. ### Claim 12 (depends on 11) The imaging element according to claim 11, wherein the detection unit that detects the signal from the second amplification element is formed in a third layer, and the first layer, the second layer, and the third layer are stacked.