# US 10,771,664 B2 · Solid-state imaging device with uneven structures and the method for manufacturing the same, and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,771,664 B2 - Document ID: US10771664B2 - Status: Granted - Kind: B2 - Application number: 16/251,531 - Filed: 2019-01-18 - Published: 2019-06-06 - Granted: 2020-09-08 - Earliest claimed: 2013-07-03 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Yoshiaki Masuda; Yuki Miyanami; Hideshi Abe; Tomoyuki Hirano; Masanari Yamaguchi; Yoshiki Ebiko; Kazufumi Watanabe; Tomoharu Ogita - Web page: https://patentgrep.com/patent/US10771664B2 ## CPC - H04N 25/633: by using optical black pixels - G02B 1/118: having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures - H04N 23/55: Optical parts specially adapted for electronic image sensors; Mounting thereof - H04N 25/17: Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location - H04N 25/62: Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels - H04N 25/70: SSIS architectures; Circuits associated therewith - H04N 25/704: Pixels specially adapted for focusing, e.g. phase difference pixel sets - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H10F 30/20: the devices having potential barriers, e.g. phototransistors - H10F 39/199: {Back-illuminated image sensors} - H10F 39/8053: {Colour filters} - H10F 39/8057: {Optical shielding} - H10F 39/8063: {Microlenses} - H10F 39/8067: {Reflectors} - H10F 39/807: {Pixel isolation structures} - H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)} - H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80) - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type. ## Claims ### Claim 1 A light detecting device, comprising: a semiconductor substrate including: a first photoelectric conversion region; a second photoelectric conversion region adjacent to the first photoelectric conversion region; and a trench disposed between the first photoelectric conversion region and the second photoelectric conversion region in a cross sectional view, a light blocking element including a first portion disposed in the trench and a second portion disposed above the semiconductor substrate; a first moth-eye structure on a light receiving side of the semiconductor substrate and disposed over the first photoelectric conversion region; a second moth-eye structure on the light receiving side of the semiconductor substrate and disposed over the second photoelectric conversion region; and an anti-reflection structure disposed above the first and second moth-eye structures and including a silicon oxide film, a tantalum oxide film, and an aluminum oxide film, wherein at least part of the anti-reflection structure extends into the trench, wherein the silicon oxide film contacts the aluminum oxide film in the trench, and wherein a width of the second portion is wider than a width of the first portion in the cross sectional view. ### Claim 2 (depends on 1) The light detecting device of claim 1, wherein an upper edge part of the first portion contacts the second portion. ### Claim 3 (depends on 2) The light detecting device of claim 2, wherein the first portion is integrally formed with the second portion. ### Claim 4 (depends on 1) The light detecting device of claim 1, wherein the light blocking element includes tungsten. ### Claim 5 (depends on 4) The light detecting device of claim 4, wherein the light blocking element further includes titanium. ### Claim 6 (depends on 1) The light detecting device of claim 1, further comprising a transparent insulation film, wherein the transparent insulation film is disposed above the first photoelectric conversion region and the second photoelectric conversion region in the cross sectional view. ### Claim 7 (depends on 6) The light detecting device of claim 6, wherein the transparent insulation film is disposed above the first photoelectric conversion region, the second photoelectric conversion region, and the trench in the cross sectional view. ### Claim 8 (depends on 7) The light detecting device of claim 7, wherein the anti-reflection structure is disposed between the transparent insulation film and the semiconductor substrate in the cross sectional view. ### Claim 9 (depends on 8) The light detecting device of claim 8, wherein the silicon oxide film is disposed between the transparent insulation film and the tantalum oxide film, the tantalum oxide film is disposed between the silicon oxide film and the aluminum oxide film, and the aluminum oxide film is disposed between the tantalum oxide film and the semiconductor substrate in the cross sectional view. ### Claim 10 (depends on 1) The light detecting device of claim 1, wherein the aluminum oxide film extends into the trench at an outer section of the trench, and the first portion of the light blocking element is at an inner section of the trench. ### Claim 11 (depends on 10) The light detecting device of claim 10, wherein the silicon oxide film is disposed between the first portion and the tantalum oxide film, the tantalum oxide film is disposed between the silicon oxide film and the aluminum oxide film, and the aluminum oxide film is disposed between the tantalum oxide film and a side wall of the semiconductor substrate in the cross sectional view. ### Claim 12 (depends on 1) The light detecting device of claim 1, wherein the semiconductor substrate includes a first flat portion and a second flat portion, the first flat portion being between the trench and the first moth-eye structure, and the second flat portion being between the trench and the second moth-eye structure. ### Claim 13 (depends on 1) The light detecting device of claim 1, further comprising: an insulation layer disposed over the first moth-eye structure and the second moth-eye structure and touching a sidewall of the second portion in the cross sectional view. ### Claim 14 (depends on 1) The light detecting device of claim 1, wherein the silicon oxide film contacts the tantalum oxide film. ### Claim 15 (depends on 14) The light detecting device of claim 14, wherein the aluminum oxide film extends into the trench at an outer section of the trench, and the first portion of the light blocking element is at an inner section of the trench. ### Claim 16 A light detecting device, comprising: a semiconductor substrate including a first photoelectric conversion region; a second photoelectric conversion region adjacent to the first photoelectric conversion region; and a trench disposed between the first photoelectric conversion region and the second photoelectric conversion region in a cross sectional view, a light blocking element including a first portion disposed in the trench and a second portion disposed above the semiconductor substrate; a first uneven structure on a light receiving side of the semiconductor substrate and disposed over the first photoelectric conversion region; a second uneven structure on the light receiving side of the semiconductor substrate and disposed over the second photoelectric conversion region; and an anti-reflection structure disposed above the first and second uneven structures and including a silicon oxide film, a tantalum oxide film, and an aluminum oxide film, wherein at least a first part of the anti-reflection structure extends into the trench, wherein at least a second part of the anti-reflection structure has the tantalum oxide film between the silicon oxide film and the aluminum oxide film, wherein the silicon oxide film contacts the aluminum oxide film in the trench, and wherein a width of the second portion is wider than a width of the first portion in the cross sectional view. ### Claim 17 (depends on 16) The light detecting device of claim 16, further comprising: an insulation layer disposed over the first uneven structure and the second uneven structure and touching a sidewall of the second portion in the cross sectional view.