# US 10,770,861 B1 · Light-emitting device having self-cooled semiconductor laser > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,861 B1 - Document ID: US10770861B1 - Status: Granted - Kind: B1 - Application number: 16/413,570 - Filed: 2019-05-15 - Granted: 2020-09-08 - Earliest claimed: 2018-05-16 - Assignees: UNM Rainforest Innovations - Applicants: Stc.Unm - Inventors: Marek Osinski; Gennady A. Smolyakov - Web page: https://patentgrep.com/patent/US10770861B1 ## CPC - H01S 5/02461: {Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity} - H01S 5/026: Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06) - H01S 5/041: {Optical pumping} - H01S 5/101: {Curved waveguide (H01S5/1243 takes precedence)} - H01S 5/125: Distributed Bragg reflector [DBR] lasers - H01S 5/3412: {quantum box or quantum dash} - H01S 5/1071: {Ring-lasers} - H01S 5/11: Comprising a photonic bandgap structure - H01S 5/2027: {Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes} - H01S 5/2031: {characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities} - H01S 5/34: comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers (H01S5/36 takes precedence) - H01S 5/4006: {Injection locking} - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL ## Abstract A light-emitting device having a self-cooled semiconductor laser having a laser cavity. ## Claims ### Claim 1 A light-emitting device comprising: a self-cooled semiconductor laser, said self-cooled semiconductor laser comprising: a laser resonator with a waveguide having a core and bound by a slab photonic-crystal structure that is defined in a cubic, hexagonal, or complex photonic-crystal lattice fabricated in the same structure as said semiconductor laser; nanoemitters having anti-Stokes photoluminescence when excited by an internal laser emission, said nanoemitters are located in said core of said waveguide; said waveguide made of a wider-bandgap semiconductor material than said nanoemitters; and wherein said nanoemitters are quantum dots. ### Claim 2 (depends on 1) The light-emitting device of claim 1, wherein said laser resonator is a Fabry-Perot cavity. ### Claim 3 (depends on 1) The light-emitting device of claim 1, wherein said laser resonator is a distributed-feedback cavity. ### Claim 4 (depends on 1) The light-emitting device of claim 1, wherein said laser resonator is a distributed Bragg reflector cavity. ### Claim 5 (depends on 1) The device of claim 1, where said laser resonator is a ring cavity. ### Claim 6 (depends on 1) The light-emitting device of claim 1, wherein said self-cooled semiconductor laser is an injection-lockable ring laser, comprising a ring laser, an injecting waveguide used to collect light from an external laser source and to deliver it to the ring laser, a waveguide directional output coupler proximate, in the lateral direction, to the cavity of the ring laser and used to collect its output; all monolithically integrated on the same substrate, and said ring laser has whistle geometry. ### Claim 7 (depends on 1) The light-emitting device of claim 1, wherein said laser resonator and said slab photonic-crystal structure are monolithically integrated on a substrate made of III-V or II-VI semiconductor materials. ### Claim 8 (depends on 1) The light-emitting device of claim 1, wherein said laser resonator and said slab photonic-crystal structure are monolithically integrated on a silicon-on-insulator substrate. ### Claim 9 (depends on 1) The device of claim 1, wherein said spontaneous emission is further confined in the vertical direction by one-dimensional stacks of distributed-Bragg-reflectors fabricated below and above said slab photonic-crystal laser cavity. ### Claim 10 (depends on 9) The light-emitting device of claim 9, wherein the peak reflectivity and bandwidth of the said distributed-Bragg-reflectors spectrally match the spontaneous emission circulating inside the photonic-crystal laser cavity. ### Claim 11 A light-emitting device comprising: a self-cooled semiconductor laser, said self-cooled semiconductor laser comprising; a laser resonator with a waveguide having a core and bound by a slab photonic-crystal structure that is defined in a cubic, hexagonal, or complex photonic-crystal lattice fabricated in the same structure as said semiconductor laser; nanoemitters having anti-Stokes photoluminescence when excited by an internal laser emission, said nanoemitters are located in said core of said waveguide; said waveguide made of a wider-bandgap semiconductor material than said nanoemitters; and wherein said nanoemitters are multiple quantum wells. ### Claim 12 (depends on 11) The light-emitting device of claim 11, wherein said laser resonator is a Fabry-Perot cavity. ### Claim 13 (depends on 11) The light-emitting device of claim 11, wherein said laser resonator is a distributed-feedback cavity. ### Claim 14 (depends on 11) The light-emitting device of claim 11, wherein said laser resonator is a distributed Bragg reflector cavity. ### Claim 15 (depends on 11) The device of claim 11, where said laser resonator is a ring cavity. ### Claim 16 (depends on 11) The light-emitting device of claim 11, wherein said self-cooled semiconductor laser is an injection-lockable ring laser, comprising a ring laser, an injecting waveguide used to collect light from an external laser source and to deliver it to the ring laser, a waveguide directional output coupler proximate, in the lateral direction, to the cavity of the ring laser and used to collect its output; all monolithically integrated on the same substrate, and said ring laser has whistle geometry. ### Claim 17 (depends on 11) The light-emitting device of claim 11, wherein said laser resonator and said slab photonic-crystal structure are monolithically integrated on a substrate made of III-V or II-VI semiconductor materials. ### Claim 18 (depends on 11) The light-emitting device of claim 11, wherein said laser resonator and the slab photonic-crystal structure are monolithically integrated on a silicon-on-insulator substrate. ### Claim 19 (depends on 11) The device of claim 11, wherein said spontaneous emission is further confined in the vertical direction by one-dimensional stacks of distributed-Bragg-reflectors fabricated below and above said slab photonic-crystal laser cavity. ### Claim 20 (depends on 19) The light-emitting device of claim 19, wherein the peak reflectivity and bandwidth of the said distributed-Bragg-reflectors spectrally match the spontaneous emission circulating inside the photonic-crystal laser cavity.