# US 10,770,689 B2 · Light emitting apparatus and lighting device

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- Number: US 10,770,689 B2
- Document ID: US10770689B2
- Status: Granted
- Kind: B2
- Application number: 16/214,899
- Filed: 2018-12-10
- Published: 2019-06-20
- Granted: 2020-09-08
- Earliest claimed: 2017-12-20
- Assignees: LG Display Co., Ltd.
- Applicants: LG Display Co., Ltd.
- Inventors: JungHyoung Lee
- Web page: https://patentgrep.com/patent/US10770689B2

## CPC

- H10W 90/00: Package configurations
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10K 19/20: comprising components having an active region that includes an inorganic semiconductor
- H10K 59/121: characterised by the geometry or disposition of pixel elements
- H10K 59/877: {comprising scattering means}
- H10K 59/879: {comprising refractive means, e.g. lenses}
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/835: {Reflective materials}
- H10H 20/882: {Scattering means (H10H20/82 takes precedence)}
- H10K 59/131: Interconnections, e.g. wiring lines or terminals
- H10K 59/179: Interconnections, e.g. wiring lines or terminals
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

Discussed are a light emitting device and a lighting apparatus, which include a substrate, a light emitting diode on the substrate, a refractive index adjustment layer on the light emitting diode, a light scattering layer on the refractive index adjustment layer, a first electrode disposed on the light scattering layer and connected to the light emitting diode, an organic light emitting layer on the first electrode, and a second electrode on the organic light emitting layer. The light scattering layer has a smaller refractive index than the refractive index adjustment layer.

## Claims

### Claim 1

A light emitting device comprising:
a substrate;
a light emitting diode on the substrate;
a refractive index adjustment layer on the light emitting diode;
a light scattering layer on the refractive index adjustment layer;
a first electrode disposed on the light scattering layer and connected to the light emitting diode;
an organic light emitting layer on the first electrode; and
a second electrode on the organic light emitting layer,
wherein the light scattering layer has a smaller refractive index than the refractive index adjustment layer.

### Claim 2 (depends on 1)

The light emitting device of claim 1, wherein the refractive index adjustment layer and the light scattering layer have a difference in a refractive index of 0.1 or greater.

### Claim 3 (depends on 1)

The light emitting device of claim 1, wherein the refractive index adjustment layer contains a polymeric resin and a first light scattering agent dispersed in the polymeric resin.

### Claim 4 (depends on 1)

The light emitting device of claim 1, wherein the refractive index adjustment layer has a lower refractive index than the light emitting diode.

### Claim 5 (depends on 4)

The light emitting device of claim 4, wherein the refractive index adjustment layer and the light emitting diode have a difference in a refractive index of 0.1 or Greater.

### Claim 6 (depends on 1)

The light emitting device of claim 1, wherein the refractive index adjustment layer has a refractive index of approximately 1.7 to 2.4.

### Claim 7 (depends on 1)

The light emitting device of claim 1, wherein the light scattering layer contains a light-transmitting medium and a second light scattering agent dispersed in the light-transmitting medium.

### Claim 8 (depends on 1)

The light emitting device of claim 1, wherein the light scattering layer has a refractive index of approximately 1.6 to 2.3.

### Claim 9 (depends on 1)

The light emitting device of claim 1, further comprising a planarization layer between the light scattering layer and the first electrode.

### Claim 10 (depends on 9)

The light emitting device of claim 9, wherein the light scattering layer has a larger refractive index than the planarization layer.

### Claim 11 (depends on 9)

The light emitting device of claim 9, wherein the planarization layer has a refractive index of approximately 1.5 to 2.0.

### Claim 12 (depends on 1)

The light emitting device of claim 1, wherein the light emitting diode comprises:
a p-type electrode on the substrate;
a p-type semiconductor layer on the p-type electrode;
an active layer on the p-type semiconductor layer;
an n-type semiconductor layer on the active layer; and
an n-type electrode on the n-type semiconductor layer.

### Claim 13 (depends on 12)

The light emitting device of claim 12, wherein the first electrode is connected to the n-type electrode.

### Claim 14 (depends on 12)

The light emitting device of claim 12, wherein the p-type semiconductor layer and the n-type semiconductor layer contain gallium nitride (GaN).

### Claim 15 (depends on 1)

The light emitting device of claim 1, further comprising a dam surrounding the light emitting diode in a plan view and disposed on the substrate,
wherein the refractive index adjustment layer is disposed in a region defined by the dam.

### Claim 16 (depends on 1)

The light emitting device of claim 1, wherein
the light emitting diode emits blue light, and
the organic light emitting layer emits yellow light.

### Claim 17

A lighting apparatus comprising:
a light emitting diode on a substrate;
a refractive index adjustment layer on the light emitting diode;
a light scattering layer on the refractive index adjustment layer;
a first electrode disposed on the light scattering layer;
an organic light emitting layer on the first electrode; and
a second electrode on the organic light emitting layer,
wherein the refractive index adjustment layer has a larger refractive index than the light scattering layer.