# US 10,770,672 B2 · Flexible OLED device, method for manufacturing same, and support substrate

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,770,672 B2
- Document ID: US10770672B2
- Status: Granted
- Kind: B2
- Application number: 16/610,975
- Filed: 2018-02-27
- Published: 2020-05-07
- Granted: 2020-09-08
- Earliest claimed: 2018-02-27
- Assignees: Sakai Display Products Corporation
- Applicants: Sakai Display Products Corporation
- Inventors: Katsuhiko Kishimoto; Yukiya Nishioka
- Web page: https://patentgrep.com/patent/US10770672B2

## CPC

- H05B 33/02: Details
- G09F 9/00: Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements (in which the variable information is permanently attached to a movable support G09F11/00; abacus G06C1/00; slide-rules G06G1/00)
- G09F 9/30: in which the desired character or characters are formed by combining individual elements (panels comprising a number of electrodes in a single cell controlling light arriving from an independent light source, e.g. electro-optical or magneto-optical cell, G02F1/00)
- H05B 33/10: Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
- H10K 50/13: comprising stacked EL layers within one EL unit
- H10K 71/80: using temporary substrates
- H10K 77/111: {Flexible substrates}
- H10K 59/12: Active-matrix OLED [AMOLED] displays
- H10K 59/879: {comprising refractive means, e.g. lenses}
- H10K 2102/00: Constructional details relating to the organic devices covered by this subclass
- H10K 2102/311: {Flexible OLED}
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- G09F: DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

According to a method for producing a flexible OLED device of the present disclosure, a multilayer stack (100) is provided, the multilayer stack including a base (10), a functional layer region (20) which includes a TFT layer and an OLED layer, a flexible film (30) provided between the base and the functional layer region and supporting the functional layer region, and a release layer (12) provided between the flexible film and the base and bound to the base. The release layer is irradiated with lift-off light (216) transmitted through the base, whereby the flexible film is delaminated from the release layer. The release layer is made of a polycrystalline of tantalum nitride.

## Claims

### Claim 1

A method for producing a flexible OLED device, comprising:
providing a multilayer stack, the multilayer stack including a base, a functional layer region which includes a TFT layer and an OLED layer, a flexible film provided between the base and the functional layer region and supporting the functional layer region, and a release layer provided between the flexible film and the base and bound to the base; and
irradiating the release layer with ultraviolet laser light transmitted through the base, thereby delaminating the flexible film from the release layer,
wherein the release layer is made of a polycrystal of tantalum nitride.

### Claim 2 (depends on 1)

The method of claim 1, wherein a molar fraction of nitrogen contained in the tantalum nitride is higher than a molar fraction of tantalum contained in the tantalum nitride.

### Claim 3 (depends on 1)

The method of claim 1, wherein
a surface of the release layer has an irregularity pattern, and
a rear surface of the flexible film has a pattern transferred from the irregularity pattern at the surface of the release layer.

### Claim 4 (depends on 1)

The method of claim 1, wherein a thickness of the release layer is not less than 50 nm and not more than 500 nm.

### Claim 5 (depends on 1)

The method of claim 1, wherein a wavelength of the ultraviolet laser light is not less than 300 nm and not more than 360 nm.

### Claim 6 (depends on 1)

The method of claim 1, wherein a thickness of the flexible film is not less than 5 μm and not more than 20 μm.

### Claim 7 (depends on 1)

The method of claim 1, wherein providing the multilayer stack includes
sputtering a tantalum target in a nitrogen-containing gas atmosphere, thereby forming a polycrystal of tantalum nitride on the base, and
forming the flexible film on the polycrystal of tantalum nitride.