# US 10,770,640 B2 · Capacitive RF MEMS intended for high-power applications

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- Number: US 10,770,640 B2
- Document ID: US10770640B2
- Status: Granted
- Kind: B2
- Application number: 15/538,632
- Filed: 2015-12-23
- Published: 2017-12-14
- Granted: 2020-09-08
- Earliest claimed: 2014-12-23
- Assignees: Thales
- Applicants: Thales
- Inventors: Afshin Ziaei; Matthieu Le Baillif; Paolo Martins; Shailendra Bansropun
- Web page: https://patentgrep.com/patent/US10770640B2

## CPC

- B81B 7/0019: {Protection against thermal alteration or destruction (B81B7/0083 takes precedence)}
- B81B 3/0021: {Transducers for transforming electrical into mechanical energy or vice versa (dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00)}
- H01G 5/16: using variation of distance between electrodes
- H01G 5/18: due to change in inclination, e.g. by flexing, by spiral wrapping
- H01H 57/00: Electrostrictive relays; Piezoelectric relays
- H01H 59/0009: {making use of micromechanics}
- H10N 30/2041: {Beam type}
- B81B 2201/018: Switches not provided for in B81B2201/014 - B81B2201/016
- H01H 2057/006: {Micromechanical piezoelectric relay}
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- H01H: ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES (contact cables H01B7/10; electrolytic self-interrupters H01G9/18; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K17/00)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

According to one aspect of the invention, there is proposed a capacitive radiofrequency MicroElectroMechanical System or capacitive RF MEMS comprising a metallic membrane suspended above an RF transmission line and resting on ground planes, and exhibiting a lower face, an upper face opposite to the lower face and a first layer comprising a refractory metallic material at least partially covering the upper face of the membrane so as to prevent the heating of the membrane.

## Claims

### Claim 1

A capacitive radiofrequency MicroElectroMechanical System or capacitive RF MEMS for high-power applications comprising a membrane suspended above an RF transmission line and resting on ground planes, the membrane exhibiting a lower face and an upper face opposite to the lower face, wherein said membrane comprises a metallic material and in that a first layer comprising a refractory metallic material different from the metallic material of the membrane, said first layer at least partially covers the upper face of the membrane so as to prevent the heating of the membrane.

### Claim 2 (depends on 1)

The RF MEMS of claim 1, in which the thickness of the first layer of refractory metallic material is between 1 and 3 microns.

### Claim 3 (depends on 1)

The RF MEMS of claim 1, in which the first layer of refractory metallic material is disposed on the parts of the upper face of the membrane which link the RF transmission line to the ground planes when the membrane is in a low state.

### Claim 4 (depends on 3)

The RF MEMS of claim 3, in which the first layer of refractory metallic material is disposed on the boundaries of the parts of the upper face of the membrane which link the RF transmission line to the ground planes when the membrane is in the low state.

### Claim 5 (depends on 1)

The RF MEMS of claim 1, in which the first layer of refractory metallic material covers the totality of the upper face of the membrane and a second layer covers the totality of the lower face of the membrane, the coefficients of thermal elongation of the first and of the second layer compensating one another so as to contain the deformations of the membrane.

### Claim 6 (depends on 5)

The RF MEMS of claim 5, in which the first layer of refractory metallic material and the second layer are identical.

### Claim 7 (depends on 5)

The RF MEMS of claim 5, in which the thickness of the first and of the second layer is less than or equal to 200 nm.

### Claim 8 (depends on 2)

The RF MEMS of claim 2 in which the first layer of refractory metallic material is disposed on the parts of the upper face of the membrane which link the RF transmission line to the ground planes when the membrane is in a low state.

### Claim 9 (depends on 8)

The RF MEMS of claim 8 in which the first layer of refractory metallic material is disposed on the boundaries of the parts of the upper face of the membrane which link the RF transmission line to the ground planes when the membrane is in the low state.

### Claim 10 (depends on 6)

The RF MEMS of claim 6 in which the thickness of the first and of the second layer is less than or equal to 200 nm.