# US 10,770,631 B2 · Display apparatus using semi-conductor light-emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,631 B2 - Document ID: US10770631B2 - Status: Granted - Kind: B2 - Application number: 15/998,662 - Filed: 2017-02-16 - Published: 2020-03-12 - Granted: 2020-09-08 - Earliest claimed: 2016-02-16 - Assignees: LG Electronics Inc. - Applicants: LG Electronics Inc. - Inventors: Seonock Kim; Hwankuk Yuh - Web page: https://patentgrep.com/patent/US10770631B2 ## CPC - H10W 90/00: Package configurations - G06F 1/1652: {the display being flexible, e.g. mimicking a sheet of paper, or rollable} - H05B 33/14: characterised by the chemical or physical composition or the arrangement of the electroluminescent material {, or by the simultaneous addition of the electroluminescent material in or onto the light source} - H10D 30/67: Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} - H10H 20/854: characterised by their material, e.g. epoxy or silicone resins - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10P 10/00: Bonding of wafers, substrates or parts of devices - H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass - H10H 20/831: characterised by their shape - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A display apparatus including a display unit; a plurality of semiconductor light emitting elements having at least a first conductive electrode to form individual pixels of the display unit; an adhesive layer disposed between adjacent semiconductor light emitting elements; a thin-film transistor having a gate region disposed closer to an upper surface of the display unit than a source region and a drain region; a via hole formed in the adhesive layer; and a via hole electrode extending in the via hole and electrically connecting the at least one conductive electrode of a corresponding semiconductor light emitting element and the source-drain electrode of the thin-film transistor. ## Claims ### Claim 1 A display apparatus, comprising: a display unit; a plurality of semiconductor light emitting elements having at least a first conductive electrode to form individual pixels of the display unit; an adhesive layer disposed between adjacent semiconductor light emitting elements; a thin-film transistor having a gate region disposed closer to an upper surface of the display unit than a source region and a drain region; a via hole formed in the adhesive layer; a via hole electrode extending in the via hole and electrically connecting the at least one conductive electrode of a corresponding semiconductor light emitting element and a source-drain electrode of the thin-film transistor; and a connection electrode connecting the via hole electrode to the first conductive electrode, wherein the via hole electrode extends in the via hole and to a lower surface of the adhesive layer, and wherein the connection electrode is disposed on the lower surface of the adhesive layer and is not disposed within the via hole. ### Claim 2 (depends on 1) The display apparatus of claim 1, wherein the via hole formed in the adhesive layer overlaps the first conductive electrode. ### Claim 3 (depends on 1) The display apparatus of claim 1, wherein the thin-film transistor comprises an insulating layer on the adhesive layer, and the gate region on a first side of the insulating layer, and the source region and the drain region on a second side of the insulating layer. ### Claim 4 (depends on 3) The display apparatus of claim 3, wherein the gate region comprises a gate electrode. ### Claim 5 (depends on 3) The display apparatus of claim 3, wherein the source region and the drain region are located below the insulating layer. ### Claim 6 (depends on 1) The display apparatus of claim 1, further comprising: a passivation layer protecting the thin-film transistor formed on the adhesive layer. ### Claim 7 (depends on 6) The display apparatus of claim 6, wherein a pixel electrode of the thin-film transistor passes through the passivation layer from the thin-film transistor. ### Claim 8 (depends on 6) The display apparatus of claim 6, further comprising: a flexible substrate covering a lower side of the passivation layer. ### Claim 9 (depends on 1) The display apparatus of claim 1, wherein the first conductive electrode of the corresponding semiconductor light-emitting elements is electrically connected to the thin-film transistor, and a second conductive electrode of the corresponding semiconductor light-emitting elements is electrically connected to a common electrode. ### Claim 10 (depends on 9) The display apparatus of claim 9, wherein at least part of the first conductive electrode is inserted into the adhesive layer. ### Claim 11 (depends on 1) The display apparatus of claim 1, further comprising: a gap insulating layer formed between the semiconductor light emitting elements. ### Claim 12 (depends on 11) The display apparatus of claim 11, wherein the adhesive layer is formed on the gap insulating layer. ### Claim 13 (depends on 1) The display apparatus of claim 1, wherein the semiconductor light emitting elements comprise vertical type semi-conductor light-emitting devices. ### Claim 14 (depends on 1) The display apparatus of claim 1, wherein the connection electrode comprises a step portion stepped from the lower surface of the adhesive layer to an insulating layer of the thin-film transistor on the adhesive layer. ### Claim 15 (depends on 1) The display apparatus of claim 1, wherein the connection electrode extends in a direction parallel to the source-drain electrode of the thin-film transistor. ### Claim 16 (depends on 1) The display apparatus of claim 1, wherein the via hole electrode covers at least part of the adhesive layer while filling the via hole.