# US 10,770,623 B2 · Light emitting diode and electroluminescent display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,623 B2 - Document ID: US10770623B2 - Status: Granted - Kind: B2 - Application number: 16/169,191 - Filed: 2018-10-24 - Published: 2019-05-02 - Granted: 2020-09-08 - Earliest claimed: 2017-10-26 - Assignees: LG Display Co., Ltd. - Applicants: LG Display Co., Ltd. - Inventors: Ji-Yeon Kang; Kyung-Kook Jang; So-Mang Kim - Web page: https://patentgrep.com/patent/US10770623B2 ## CPC - H10H 20/822: Materials of the light-emitting regions - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/818: within the light-emitting regions - H10H 20/8512: {Wavelength conversion materials} - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots - H10K 59/38: comprising colour filters or colour changing media [CCM] - H10D 86/40: characterised by multiple TFTs - H10D 86/60: wherein the TFTs are in active matrices - H10H 20/833: Transparent materials - H10H 20/835: {Reflective materials} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract An emitting diode includes a first electrode in a first pixel; a first emitting layer positioned on the first electrode and in the first pixel and including a first amorphous oxide semiconductor material and a first quantum dot, wherein the first amorphous oxide semiconductor material includes an indium atom, a gallium atom and a zinc atom; and a second electrode covering the first emitting layer. ## Claims ### Claim 1 An emitting diode, comprising: a first electrode in a first pixel; a first emitting layer positioned on the first electrode and including a first amorphous oxide semiconductor material and a first quantum dot, wherein the first amorphous oxide semiconductor material includes an indium atom, a gallium atom and a zinc atom; and a second electrode covering the first emitting layer; wherein the first amorphous oxide semiconductor material has an energy level matching an energy level of the first quantum dot and the matched energy level enhances a charge transfer property of the emitting diode; further comprising a second emitting layer in a second pixel and including a second amorphous oxide semiconductor material and a second quantum dot, wherein the second amorphous oxide semiconductor material includes an indium atom, a gallium atom and a zinc atom. ### Claim 2 (depends on 1) The emitting diode according to claim 1, wherein the indium atom, the gallium atom and the zinc atom in the first amorphous oxide semiconductor material and the indium atom, the gallium atom and the zinc atom in the second amorphous oxide semiconductor material have a difference in a mole fraction. ### Claim 3 (depends on 2) The emitting diode according to claim 2, wherein the gallium atom in the first amorphous oxide semiconductor material has a first mole fraction with respect to the indium atom, and the gallium atom in the second amorphous oxide semiconductor material has a second mole fraction with respect to the indium atom, wherein the second mole fraction is greater than the first mole fraction. ### Claim 4 (depends on 2) The emitting diode according to claim 2, wherein the zinc atom in the first amorphous oxide semiconductor material has a third mole fraction with respect to the indium atom, and the zinc atom in the second amorphous oxide semiconductor material has a fourth mole fraction with respect to the indium atom, wherein the fourth mole fraction is greater than the third mole fraction. ### Claim 5 (depends on 2) The emitting diode according to claim 2, wherein the first quantum dot has a valance band maximum level greater than the second quantum dot, and the first amorphous oxide semiconductor material has a valance band maximum level greater than the second amorphous oxide semiconductor material. ### Claim 6 (depends on 1) The emitting diode according to claim 1, further comprising a third emitting layer in a third pixel and including a third amorphous oxide semiconductor material and a third quantum dot, wherein the third amorphous oxide semiconductor material includes an indium atom, a gallium atom and a zinc atom. ### Claim 7 (depends on 6) The emitting diode according to claim 6, wherein the indium atom, the gallium atom and the zinc atom in the first amorphous oxide semiconductor material and the indium atom, the gallium atom and the zinc atom in the third amorphous oxide semiconductor material have a difference in a mole fraction. ### Claim 8 (depends on 7) The emitting diode according to claim 7, wherein the indium atom in the first amorphous oxide semiconductor material has a fifth mole fraction with respect to the gallium atom, and the indium atom in the third amorphous oxide semiconductor material has a sixth mole fraction with respect to the gallium atom, wherein the sixth mole fraction is greater than the fifth mole fraction. ### Claim 9 (depends on 6) The emitting diode according to claim 6, wherein the first quantum dot has a valance band maximum level smaller than the third quantum dot, and the first amorphous oxide semiconductor material has a valance band maximum level smaller than the third amorphous oxide semiconductor material. ### Claim 10 An electroluminescent display device including an emitting diode on a substrate, comprising: a first electrode in a first pixel; a first emitting layer positioned on the first electrode and including a first amorphous oxide semiconductor material and a first quantum dot, wherein the first amorphous oxide semiconductor material includes an indium atom, a gallium atom and a zinc atom; and a second electrode covering the emitting layer; and a thin film transistor positioned between the substrate and the emitting diode, and connected to the first electrode, wherein the first amorphous oxide semiconductor material has an energy level matching an energy level of the first quantum dot and the matched energy level enhances a charge transfer property of the emitting diode; further comprising a second emitting layer in a second pixel and including a second amorphous oxide semiconductor material and a second quantum dot, wherein the second amorphous oxide semiconductor material includes an indium atom, a gallium atom and a zinc atom. ### Claim 11 An electroluminescent display device, comprising: a substrate including a first pixel; an emitting diode on the substrate; a thin film transistor positioned between the substrate and the emitting diode, and connected to the emitting diode; and a first color conversion layer in the first pixel, wherein the first color conversion layer includes a first amorphous oxide semiconductor material and a first quantum dot, and the first amorphous oxide semiconductor material includes an indium atom, a gallium atom and a zinc atom; further comprising a second color conversion layer in a second pixel and including a second amorphous oxide semiconductor material and a second quantum dot, wherein the second amorphous oxide semiconductor material includes the indium atom, the gallium atom and the zinc atom. ### Claim 12 (depends on 11) The electroluminescent display device according to claim 11, wherein the first color conversion layer is positioned between the substrate and the emitting diode and disposed over the emitting diode. ### Claim 13 (depends on 11) The electroluminescent display device according to claim 11, wherein the indium atom, the gallium atom and the zinc atom in the first amorphous oxide semiconductor material and the indium atom, the gallium atom and the zinc atom in the second amorphous oxide semiconductor material have a difference in a mole fraction. ### Claim 14 (depends on 13) The electroluminescent display device according to claim 13, wherein the gallium atom in the first amorphous oxide semiconductor material has a first mole fraction with respect to the indium atom, and the gallium atom in the second amorphous oxide semiconductor material has a second mole fraction with respect to the indium atom, wherein the second mole fraction is greater than the first mole fraction. ### Claim 15 (depends on 13) The electroluminescent display device according to claim 13, wherein the zinc atom in the first amorphous oxide semiconductor material has a third mole fraction with respect to the indium atom, and the zinc atom in the second amorphous oxide semiconductor material has a fourth mole fraction with respect to the indium atom, wherein the fourth mole fraction is greater than the third mole fraction. ### Claim 16 (depends on 14) The electroluminescent display device according to claim 14, wherein the first quantum dot has a valance band maximum level greater than the second quantum dot, and the first amorphous oxide semiconductor material has a valance band maximum level greater than the second amorphous oxide semiconductor material. ### Claim 17 (depends on 12) The electroluminescent display device according to claim 12, further comprising a third emitting layer in a third pixel and including a third amorphous oxide semiconductor material and a third quantum dot, wherein the third amorphous oxide semiconductor material includes the indium atom, the gallium atom and the zinc atom. ### Claim 18 (depends on 17) The electroluminescent display device according to claim 17, wherein the indium atom, the gallium atom and the zinc atom in the first amorphous oxide semiconductor material and the indium atom, the gallium atom and the zinc atom in the third amorphous oxide semiconductor material have a difference in a mole fraction. ### Claim 19 (depends on 18) The electroluminescent display device according to claim 18, wherein the indium atom in the first amorphous oxide semiconductor material has a fifth mole fraction with respect to the gallium atom, and the indium atom in the third amorphous oxide semiconductor material has a sixth mole fraction with respect to the gallium atom, wherein the sixth mole fraction is greater than the fifth mole fraction. ### Claim 20 (depends on 17) The electroluminescent display device according to claim 17, wherein the first quantum dot has a valance band maximum level smaller than the third quantum dot, and the first amorphous oxide semiconductor material has a valance band maximum level smaller than the third amorphous oxide semiconductor material.