# US 10,770,622 B2 · Light-emitting element and light-emitting element package comprising same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,622 B2 - Document ID: US10770622B2 - Status: Granted - Kind: B2 - Application number: 16/066,975 - Filed: 2016-12-15 - Published: 2019-01-10 - Granted: 2020-09-08 - Earliest claimed: 2015-12-29 - Assignees: LG Innotek Co., Ltd. - Applicants: LG Innotek Co., Ltd. - Inventors: Young Hun Han - Web page: https://patentgrep.com/patent/US10770622B2 ## CPC - H10H 20/821: of the light-emitting regions, e.g. non-planar junctions - H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/8162: {Current-blocking structures} - H10H 20/8215: {characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping} - H10H 20/824: comprising only Group III-V materials, e.g. GaP - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/8252: {characterised by the dopants} - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 20/01: Manufacture or treatment - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract One embodiment of a light-emitting element comprises: a substrate; a first-conductive type semiconductor layer disposed on the substrate and including at least one pit; a superlattice layer disposed on the first-conductive type semiconductor layer and including at least one pit; an active layer disposed on the superlattice layer and including at least one pit; an electron blocking layer disposed on the active layer and including at least one pit; a pit layer disposed on the electron blocking layer and including at least one pit; and a second-conductive type semiconductor layer disposed on the pit layer, wherein the pit layer can be doped with Mg at at least a portion thereof. ## Claims ### Claim 1 A light-emitting device comprising: a substrate; a first conductive-type semiconductor layer disposed on the substrate and including at least one first recess; a first electrode directly contacting an upper surface of the first conductive-type semiconductor layer; a superlattice layer disposed on the first conductive-type semiconductor layer and including at least one second recess; an active layer disposed on the superlattice layer and including at least one third recess; an electron blocking layer disposed on the active layer and including at least one fourth recess; and a second conductive-type semiconductor layer disposed on the electron blocking layer, wherein the at least one first recess, the at least one second recess, the at least one third recess, and the at least one fourth recess are overlapped with each other, wherein the at least one first recess includes a first depth, wherein the at least one second recess includes a second depth, wherein the at least one third recess includes a third depth, wherein the at least one fourth recess includes a fourth depth, wherein the first depth is less than the fourth depth, wherein the second conductive-type semiconductor layer includes at least one protrusion protruding toward the substrate, wherein a height of the protrusion is less than the fourth depth, wherein a distance between a lowest portion of the at least one first recess in the first conductive-type semiconductor layer and an upper surface of the substrate is less than a distance between a lower surface of the first electrode and the upper surface of the substrate, and wherein a distance between a topmost portion of the at least one first recess in the first conductive-type semiconductor layer and the upper surface of the substrate is substantially equal to a distance between the lower surface of the first electrode and the upper surface of the substrate. ### Claim 2 (depends on 1) The light emitting device of claim 1, wherein the second conductive-type semiconductor layer includes a first layer doped with Mg and a second layer that is the remaining region. ### Claim 3 (depends on 2) The light emitting device of claim 2, wherein the first layer and the second layer of the second conductive-type semiconductor layer are provided in a plural number and the plurality of first layers and the plurality of second layers are alternately stacked. ### Claim 4 (depends on 3) The light emitting device of claim 3, wherein the second conductive-type semiconductor layer includes four first layers and four second layers. ### Claim 5 (depends on 3) The light emitting device of claim 3, wherein the second conductive-type semiconductor layer is formed by performing an annealing process after the first layer and the second layer are stacked. ### Claim 6 (depends on 2) The light emitting device of claim 2, wherein the second conductive-type semiconductor layer includes a first region including at least one fifth recess formed therein and a second region that is the remaining region, and wherein a first thickness measured as a thickness of the second region is 30 nm to 50 nm. ### Claim 7 (depends on 6) The light emitting device of claim 6, wherein a second thickness measured as the sum of thicknesses of the first layer and the second layer in the second region is 5 nm to 15 nm. ### Claim 8 (depends on 2) The light emitting device of claim 2, wherein the first layer includes MgN and the second layer includes GaN. ### Claim 9 (depends on 2) The light emitting device of claim 2, wherein the first layer is doped with Mg with a doping concentration of 1×1018 to 5×1018 atoms per cm3. ### Claim 10 (depends on 1) The light emitting device of claim 1, wherein the first conductive-type semiconductor layer is doped with an n-type dopant and includes a third layer including the at least one first recess formed therein and a fourth layer disposed below the third layer. ### Claim 11 (depends on 10) The light emitting device of claim 10, wherein the second conductive-type semiconductor layer is doped with a p-type dopant and includes a fifth layer disposed on the second conductive-type semiconductor layer and a sixth layer disposed on the fifth layer. ### Claim 12 (depends on 1) The light emitting device of claim 1, wherein the protrusion in the second conductive-type semiconductor layer has a maximum width of 180 nm to 250 nm. ### Claim 13 (depends on 1) The light emitting device of claim 1, wherein a center of the at least one first recess, a center of the at least one second recess, a center of the at least one third recess, and a center of the at least one fourth recess are overlapped with each other. ### Claim 14 (depends on 1) The light emitting device of claim 1, wherein the first depth is equal to the second depth, and the third depth is equal to the fourth depth. ### Claim 15 A light-emitting element comprising: a substrate; a first conductive-type semiconductor layer disposed on the substrate and including at least one first recess; a first electrode directly contacting an upper surface of the first conductive-type semiconductor layer; a superlattice layer disposed on the first conductive-type semiconductor layer and including at least one second recess; an active layer disposed on the superlattice layer and including at least one third recess; an electron blocking layer disposed on the active layer and including at least one fourth recess; and a second conductive-type semiconductor layer disposed on the electron blocking layer, wherein the second conductive-type semiconductor layer includes a first layer including MgN and a second layer including GaN; wherein the first layer and the second layer of the second conductive-type semiconductor layer are provided in a plural number and the plurality of first layers and the plurality of second layers are alternately stacked, wherein the at least one first recess, the at least one second recess. the at least one third recess, and the at least one fourth recess are overlapped with each other, wherein the at least one first recess includes a first depth, wherein the at least one second recess includes a second depth, wherein the at least one third recess includes a third depth, wherein the at least one fourth recess includes a fourth depth, wherein the first depth is less than the fourth depth, wherein the second conductive-type semiconductor layer includes at least one protrusion protruding toward the substrate, wherein a height of the protrusion is less than the fourth depth, wherein a distance between a lowest portion of the at least one first recess in the first conductive-type semiconductor layer and an upper surface of the substrate is less than a distance between a lower surface of the first electrode and the upper surface of the substrate, and wherein a distance between a topmost portion of the at least one first recess in the first conductive-type semiconductor layer and the upper surface of the substrate is substantially equal to a distance between the lower surface of the first electrode and the upper surface of the substrate. ### Claim 16 (depends on 15) The light-emitting element of claim 15, wherein the first layer is doped with Mg with a doping concentration of 1×1018 to 5×1018 atoms per cm3. ### Claim 17 (depends on 15) The light-emitting element of claim 15, wherein the second conductive-type semiconductor layer is formed by performing an annealing process after the first layer and the second layer are stacked. ### Claim 18 (depends on 15) The light-emitting element of claim 15, wherein a first thickness measured as a thickness of the second region is 30 nm to 50 nm. ### Claim 19 (depends on 15) The light-emitting element of claim 15, wherein a second thickness measured as the sum of thicknesses of the first layer and the second layer in the second region is 5 nm to 15 nm. ### Claim 20 A light-emitting element package comprising: a body including a cavity; a lead frame installed on the body; and a light-emitting element electrically connected to the lead frame, wherein the light-emitting element comprises: a substrate; a first conductive-type semiconductor layer disposed on the substrate and including at least one first recess; a first electrode directly contacting an upper surface of the first conductive-type semiconductor layer; a superlattice layer disposed on the first conductive-type semiconductor layer and including at least one second recess; an active layer disposed on the superlattice layer and including at least one third recess; an electron blocking layer disposed on the active layer and including at least one fourth recess; and a second conductive-type semiconductor layer disposed on the electron blocking layer, wherein the at least one first recess, the at least one second recess, the at least one third recess, and the at least one fourth recess are overlapped with each other, wherein the at least one first recess includes a first depth, wherein the at least one second recess includes a second depth, wherein the at least one third recess includes a third depth, wherein the at least one fourth recess includes a fourth depth, wherein the first depth is less than the fourth depth, wherein the second conductive-type semiconductor layer includes at least one protrusion protruding toward the substrate, wherein a height of the protrusion is less than the fourth depth, wherein a distance between a lowest portion of the at least one first recess in the first conductive-type semiconductor layer and an upper surface of the substrate is less than a distance between a lower surface of the first electrode and the upper surface of the substrate, and wherein a distance between a topmost portion of the at least one first recess in the first conductive-type semiconductor layer and the upper surface of the substrate is substantially equal to a distance between the lower surface of the first electrode and the upper surface of the substrate.