# US 10,770,619 B2 · Light-emitting devices and displays with improved performance

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- Number: US 10,770,619 B2
- Document ID: US10770619B2
- Status: Granted
- Kind: B2
- Application number: 16/415,037
- Filed: 2019-05-17
- Published: 2019-09-12
- Granted: 2020-09-08
- Earliest claimed: 2006-06-02
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Seth Coe-Sullivan; Marshall Cox; Caroline J. Roush; Jonathan S. Steckel
- Web page: https://patentgrep.com/patent/US10770619B2

## CPC

- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- C09K 11/02: Use of particular materials as binders, particle coatings or suspension media therefor
- C09K 11/565: {with zinc cadmium}
- C09K 11/883: {with zinc or cadmium}
- H05B 33/145: {Arrangements of the electroluminescent material}
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/823: comprising only Group II-VI materials, e.g. ZnO
- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10K 50/11: characterised by the electroluminescent [EL] layers
- H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes a first electrode including an anode opposite a second electrode including a cathode, a hole injection layer adjacent the first electrode, a hole transporting layer disposed on the hole injection layer, and an emissive layer of inorganic semiconductor nanocrystals disposed between the hole transporting layer and the second electrode. The inorganic semiconductor nanocrystals comprising a plurality of semiconductor nanocrystals capable of emitting light upon excitation.

## Claims

### Claim 1

A light-emitting device comprising:
a first electrode comprising an anode opposite a second electrode comprising a cathode;
a hole injection layer adjacent to the first electrode; and
an emissive layer of inorganic semiconductor nanocrystals disposed between the hole injection layer and the second electrode, the inorganic semiconductor nanocrystals comprising a plurality of semiconductor nanocrystals capable of emitting light upon excitation,
wherein the device has an external quantum efficiency of at least about 2.2 percent.

### Claim 2 (depends on 1)

The light-emitting device in accordance with claim 1, wherein at least a portion of the semiconductor nanocrystals comprise a core including a first semiconductor material comprising a ternary semiconductor material and a shell overcoating the core, the shell comprising a second semiconductor material.

### Claim 3 (depends on 2)

The light-emitting device in accordance with claim 2, wherein the first semiconductor nanocrystal comprises a ternary semiconductor nanocrystal comprising a Group II-VI compound, a Group III-V compound, or a combination thereof.

### Claim 4 (depends on 1)

The light-emitting device in accordance with claim 1, further comprising:
a hole transporting layer disposed between the hole injection layer and the emissive layer of inorganic semiconductor nanocrystals.

### Claim 5 (depends on 1)

The light-emitting device in accordance with claim 1, further comprising:
an electron transporting layer disposed between the second electrode and the emissive layer of inorganic semiconductor nanocrystals.

### Claim 6 (depends on 1)

The light-emitting device in accordance with claim 1, wherein the device emits light having a CIE color coordinate of x greater than 0.63.

### Claim 7 (depends on 1)

The light-emitting device in accordance with claim 1 wherein the emissive layer comprises semiconductor nanocrystals capable of emitting green light upon excitation or semiconductor nanocrystals capable of emitting red light upon excitation.

### Claim 8

A light-emitting device comprising:
a first electrode comprising an anode opposite to a second electrode comprising a cathode;
a hole injection layer adjacent to the first electrode; and
an emissive layer of inorganic semiconductor nanocrystals disposed between the hole injection layer and the second electrode, the inorganic semiconductor nanocrystals comprising a plurality of semiconductor nanocrystals capable of emitting light upon excitation,
wherein the device is capable of emitting light with a brightness of at least 100 nits when driven at a voltage less than or equal to 4 volts.

### Claim 9 (depends on 8)

The light-emitting device in accordance with claim 8, wherein at least a portion of the semiconductor nanocrystals comprise a core including a first semiconductor material comprising a ternary semiconductor material and a shell overcoating the core, the shell comprising a second semiconductor material.

### Claim 10 (depends on 9)

The light-emitting device in accordance with claim 9, wherein the first semiconductor nanocrystal comprises a ternary semiconductor nanocrystal comprising a Group II-VI compound, a Group III-V compound, or a combination thereof.

### Claim 11 (depends on 8)

The light-emitting device in accordance with claim 8, further comprising:
a hole transporting layer disposed between the hole injection layer and the emissive layer of inorganic semiconductor nanocrystals.

### Claim 12 (depends on 8)

The light-emitting device in accordance with claim 8, further comprising:
an electron transporting layer disposed between the second electrode and the emissive layer of inorganic semiconductor nanocrystals.

### Claim 13 (depends on 8)

The light-emitting device in accordance with claim 8, wherein the device emits light having a CIE color coordinate of x greater than 0.63.

### Claim 14 (depends on 8)

The light-emitting device in accordance with claim 8, wherein the device has an external quantum efficiency of at least about 2.2 percent.

### Claim 15

A light-emitting device comprising:
a first electrode comprising an anode opposite a second electrode comprising a cathode;
a hole injection layer adjacent the first electrode; and
an emissive layer of inorganic semiconductor nanocrystals disposed between the hole injection layer and the second electrode, the inorganic semiconductor nanocrystals comprising a plurality of semiconductor nanocrystals capable of emitting light upon excitation,
wherein at least a portion of the semiconductor nanocrystals comprise a core including a first semiconductor material comprising a ternary semiconductor material and a shell overcoating the core, the shell comprising a second semiconductor material, and
wherein the ternary semiconductor material comprises a Group II-VI compound, a Group III-V compound, or a combination thereof.

### Claim 16 (depends on 15)

The light-emitting device in accordance with claim 15, further comprising:
a hole transporting layer disposed between the hole injection layer and the emissive layer of inorganic semiconductor nanocrystals.

### Claim 17 (depends on 15)

The light-emitting device in accordance with claim 15, further comprising;
an electron transporting layer disposed between the second electrode and the emissive layer of inorganic semiconductor nanocrystals.

### Claim 18

A light-emitting device comprising:
a first electrode comprising an anode opposite a second electrode comprising a cathode;
a hole injection layer adjacent to the first electrode; and
an emissive layer of inorganic semiconductor nanocrystals disposed between the hole injection layer and the second electrode, the inorganic semiconductor nanocrystals comprising a plurality of semiconductor nanocrystals capable of emitting light upon excitation,
wherein the device emits light having a CIE color coordinate of x greater than 0.63.

### Claim 19 (depends on 18)

The light-emitting device in accordance with claim 18, further comprising:
a hole transporting layer disposed between the hole injection layer and the emissive layer of inorganic semiconductor nanocrystals.

### Claim 20 (depends on 18)

The light-emitting device in accordance with claim 18, further comprising:
an electron transporting layer disposed between the second electrode and the emissive layer of inorganic semiconductor nanocrystals.