# US 10,770,604 B2 · Hybrid perovskite bulk photovoltaic effect devices and methods of making the same

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- Number: US 10,770,604 B2
- Document ID: US10770604B2
- Status: Granted
- Kind: B2
- Application number: 15/934,656
- Filed: 2018-03-23
- Published: 2018-09-27
- Granted: 2020-09-08
- Earliest claimed: 2017-03-24
- Assignees: Alliance for Sustainable Energy, LLC
- Applicants: Alliance for Sustainable Energy, LLC; Colorado School of Mines
- Inventors: Lauren Marie Garten; David Todd Moore; David Samuel Ginley; Brian Patrick Gorman
- Web page: https://patentgrep.com/patent/US10770604B2

## CPC

- C07C 211/04: Mono-, di- or tri-methylamine
- H10F 10/14: Photovoltaic cells having only PN homojunction potential barriers
- H10F 77/12: Active materials
- H10K 30/451: {comprising a metal-semiconductor-metal [m-s-m] structure}
- H10K 85/50: Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
- H10K 30/10: comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K 30/50: Photovoltaic [PV] devices
- H10N 30/857: Macromolecular compositions
- Y02E 10/547: Monocrystalline silicon PV cells
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- C07C: ACYCLIC OR CARBOCYCLIC COMPOUNDS
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

The present disclosure relates to a composition that includes a perovskite crystal having a ferroelectric domain aligned substantially parallel to a reference axis. In some embodiments of the present disclosure, the perovskite crystal may include ABX3, where A is a first cation, B is a second cation, and X is an anion. In some embodiments of the present disclosure, A may include an alkyl ammonium cation. In some embodiments of the present disclosure, B may include a metal element. In some embodiments of the present disclosure, the metal element may include lead. In some embodiments of the present disclosure, X may include a halogen. In some embodiments of the present disclosure, the perovskite crystal may include methylammonium lead iodide.

## Claims

### Claim 1

A composition comprising:
a methylammonium lead iodide perovskite crystal comprising a ferroelectric domain aligned substantially parallel to a reference axis, wherein:
the ferroelectric domain has a crystal structure consisting essentially of at least one of a tetragonal phase or an orthorhombic phase,
the ferroelectric domain has a width between 2 μm and 40 μm,
the ferroelectric domain has a length between one angstrom and 10 mm, and
the ferroelectric domain has a d33 value between 50 pC/N and 60 pC/N.

### Claim 2 (depends on 1)

The composition of claim 1, wherein the ferroelectric domain is characterized by a Rayleigh response having a positive slope.

### Claim 3

A device comprising
a layer comprising a methylammonium lead iodide perovskite crystal comprising a ferroelectric domain aligned substantially parallel to a reference axis, wherein:
the ferroelectric domain has a crystal structure consisting essentially of at least one of a tetragonal phase or an orthorhombic phase,
the ferroelectric domain has a width between 2 μm and 40 μm,
the ferroelectric domain has a length between one angstrom and 10 mm, and
the ferroelectric domain has a d33 value between 50 pC/N and 60 pC/N.

### Claim 4 (depends on 3)

The device of claim 3, wherein:
the layer further comprises a first surface and a second surface,
the second surface is substantially parallel to the first surface,
the first surface and the second surface define a thickness of the layer, and
the reference axis is substantially perpendicular to the first surface and the second surface.

### Claim 5 (depends on 4)

The device of claim 4, wherein the thickness is between 1 Å and 10 mm.

### Claim 6 (depends on 4)

The device of claim 4, further comprising:
a first electrode comprising a first metal positioned against the first surface; and
a second electrode comprising a second metal positioned against the second surface, wherein:
the layer is positioned between the first electrode and the second electrode.

### Claim 7 (depends on 6)

The device of claim 6, wherein the first metal and the second metal are the same.